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Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 7, 页码: Art.No.071908
Authors:  Zhang JC;  Jiang DS;  Sun Q;  Wang JF;  Wang YT;  Liu JP;  Chen J;  Jin RQ;  Zhu JJ;  Yang H;  Dai T;  Jia QJ;  Zhang, JC, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: jczhang@red.semi.ac.cn
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X-ray-diffraction