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Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
SOLID-STATE ELECTRONICS, 2013, 卷号: 83, 页码: 66-70
Authors:  Wang, Lanxiang;  Su, Shaojian;  Wang, Wei;  Gong, Xiao;  Yang, Yue;  Guo, Pengfei;  Zhang, Guangze;  Xue, Chunlai;  Cheng, Buwen;  Han, Genquan;  Yeo, Yee-Chia
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Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648
Authors:  Gong, Xiao;  Han, Genquan;  Liu, Bin;  Wang, Lanxiang;  Wang, Wei;  Yang, Yue;  Kong, Eugene Yu-Jin;  Su, Shaojian;  Xue, Chunlai);  Cheng, Buwen;  Yeo, Yee-Chia
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Error analysis of InP arrayed waveguide grating 期刊论文
Acta Photonica Sinica, 2013, 卷号: 42, 期号: 3, 页码: 293-297
Authors:  PAN Pan, AN Jun-ming, WANG Liang-liang, ZHANG Li-yao, WANG Yue, HU Xiong-wei
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Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 2, 页码: 217-219
Authors:  Yu, Guohao;  Wang, Yue;  Cai, Yong;  Dong, Zhihua;  Zeng, Chunhong;  Zhang, Baoshun
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Design and fabrication of an InP arrayed waveguide grating for monolithic PICs 期刊论文
Journal of Semiconductors, 2013, 卷号: 33, 期号: 7, 页码: 074010
Authors:  Pan, Pan;  An, Junming;  Wang, Liangliang;  Wu, Yuanda;  Wang, Yue;  Hu, Xiongwei
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Special asymmetric low loss 1×5 optical power splitter 期刊论文
Acta Photonica Sinica, 2013, 卷号: 42, 期号: 3, 页码: 298-302
Authors:  Wang, Liang-Liang;  An, Jun-Ming;  Wu, Yuan-Da;  Wang, Yue;  Zhang, Jia-Shun,;  Zhang, Xiao-Guang;  Pan, Pan;  Zhang, Li-Yao;  Hu, Xiong-Wei;  Zhao, De-Gang
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Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9, 页码: 096101
Authors:  Sun HH (Sun He-Hui);  Guo FY (Guo Feng-Yun);  Li DY (Li Deng-Yue);  Wang L (Wang Lu);  Zhao DG (Zhao De-Gang);  Zhao LC (Zhao Lian-Cheng)
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Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs 期刊论文
Electrochemical and Solid-State Letters, 2012, 卷号: 15, 期号: 6, 页码: H179-H181
Authors:  Wang, Lanxiang;  Han, Genquan;  Su, Shaojian;  Zhou, Qian;  Yang, Yue;  Guo, Pengfei;  Wang, Wei;  Tong, Yi;  Lim, Phyllis Shi Ya;  Liu, Bin;  Kong, Eugene Yu-Jing;  Xue, Chunlai;  Wang, Qiming;  Cheng, Buwen;  Yeo, Yee-Chia
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Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 33, 期号: 11, 页码: 1529-1531
Authors:  Wang LX (Wang, Lanxiang);  Su SJ (Su, Shaojian);  Wang W (Wang, Wei);  Yang Y (Yang, Yue);  Tong Y (Tong, Yi);  Liu B (Liu, Bin);  Guo PF (Guo, Pengfei);  Gong X (Gong, Xiao);  Zhang GZ (Zhang, Guangze);  Xue CL (Xue, Chunlai);  Cheng BW (Cheng, Buwen);  Han GQ (Han, Genquan);  Yeo YC (Yeo, Yee-Chia)
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Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer 期刊论文
Digest of Technical Papers - Symposium on VLSI Technology, 2012, 页码: 97-98
Authors:  Han, Genquan;  Su, Shaojian;  Wang, Lanxiang;  Zhang, Zheng;  Xue, Chunlai;  Cheng, Buwen;  Yeo, Yee-Chia;  Wang, Wei;  Gong, Xiao;  Yang, Yue;  Ivana;  Guo, Pengfei;  Guo, Cheng;  Zhang, Guangze;  Pan, Jisheng
Adobe PDF(882Kb)  |  Favorite  |  View/Download:996/392  |  Submit date:2013/05/07