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Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles 期刊论文
NANOSCALE RESEARCH LETTERS, 2009, 卷号: 4, 期号: 10, 页码: 1121-1125
Authors:  You JB;  Zhang XW;  Dong JJ;  Song XM;  Yin ZG;  Chen NF;  Yan H;  Zhang XW Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: xwzhang@semi.ac.cn
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Znmgo Films  Photoluminescence  Localized Surface Plasmon  Nanoparticles  
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 8, 页码: Art. No. 083713
Authors:  Cai PF;  You JB;  Zhang XW;  Dong JJ;  Yang XL;  Yin ZG;  Chen NF;  Zhang XW Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: xwzhang@semi.ac.cn
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Annealing  Carrier Density  Carrier Mobility  Diffusion  Electrical Conductivity  Electrical Resistivity  Hydrogen  Ii-vi Semiconductors  Impurity States  Interstitials  Light Transmission  Plasma Materials Processing  Semiconductor Thin Films  Sputter Deposition  Vacancies (Crystal)  Visible Spectra  Wide Band Gap Semiconductors  Zinc Compounds  
Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 26, 页码: Art. No. 262105
Authors:  You JB;  Zhang XW;  Cai PF;  Dong JJ;  Gao Y;  Yin ZG;  Chen NF;  Wang RZ;  Yan H;  Zhang XW Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: xwzhang@semi.ac.cn
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Atomic Force Microscopy  Field Emission  Hydrogen  Ii-vi Semiconductors  Plasma Materials Processing  Sputter Deposition  Wide Band Gap Semiconductors  Work Function  Zinc Compounds  
图案化纳米模板及其制备方法 专利
专利类型: 发明, 专利号: CN201010520234.0, 公开日期: 2011-08-31
Inventors:  董敬敬;  张兴旺;  尹志岗;  谭海仁;  高云;  张曙光;  白一鸣
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