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Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文
SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Zhao, YW;  Dong, ZY;  Zhang, YH;  Li, CJ;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(230Kb)  |  收藏  |  浏览/下载：1250/312  |  提交时间：2010/03/29
Deep-level Defects  Fe-doped Inp  Grown Inp  Spectroscopy  Resonance  Wafer  
无权访问的条目 期刊论文
作者:  Dong, QR;  Xu, YQ;  Zhang, SY;  Niu, ZC;  Dong, QR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: qrdong@red.semi.ac.cn
Adobe PDF(310Kb)  |  收藏  |  浏览/下载：708/163  |  提交时间：2010/03/17