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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:  Deng Y;  Zhao DG;  Le LC;  Jiang DS;  Wu LL;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  Composition Fluctuations  X-ray Diffraction  Layer  
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:  Zhu JH;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Qiu YX;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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Diodes  Efficiency  
Enhancement of quality factor for TE whispering-gallery modes in microcylinder resonators 期刊论文
OPTICS EXPRESS, 2010, 卷号: 18, 期号: 12, 页码: 13057-13062
Authors:  Yang YD (Yang Yue-De);  Huang YZ (Huang Yong-Zhen);  Guo WH (Guo Wei-Hua);  Lu QY (Lu Qiaoyin);  Donegan JF (Donegan John F.);  Yang, YD, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: yzhuang@semi.ac.cn
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Lasers  
Internal quantum efficiency analysis of solar cell by genetic algorithm 期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 11, 页码: 1888-1891
Authors:  Xiong KL (Xiong Kanglin);  Lu SL (Lu Shulong);  Zhou TF (Zhou Taofei);  Jiang DS (Jiang Desheng);  Wang RX (Wang Rongxin);  Qiu K (Qiu Kai);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Yang, H, Chinese Acad Sci, Inst Semicond, A35 Qing Hua E Rd, Beijing 100083, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
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Internal Quantum Efficiency  Surface Recombination  Genetic Algorithm  Full Spectra  
Light-splitting photovoltaic system utilizing two dual-junction solar cells 期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 12, 页码: 1975-1978
Authors:  Xiong KL;  Lu SL;  Dong JR;  Zhou TF;  Jiang DS;  Wang RX;  Yang H;  Yang, H, CAS, Suzhou Inst Nano Tech & Nano Bion, Ruoshui Rd 398, Suzhou 215125, Peoples R China.
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Light Splitting  Gainp/gaas  Gainasp/ingaas  Dual Junction  
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文
: JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Wang;  H;  Liu ZS;  Zhang SM;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Nitride Materials  Photoconductivity And Photovoltaics  Computer Simulations  Films  
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:  Wang LJ;  Zhang SM;  Zhu JH;  Zhu JJ;  Zhao DG;  Liu ZS;  Jiang DS;  Wang YT;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
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Gan  Light Emitting Diode  Surface Treatment  Leakage Current  Threading Dislocation Densities  Layers  Ni/au  Leds  
条形叉指n阱和p衬底结的硅LED设计及分析 期刊论文
发光学报, 2010, 卷号: 31, 期号: 3, 页码: 369-372
Authors:  杨广华;  毛陆虹;  黄春红;  王伟;  郭维廉
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标准CMOS工艺栅控Si-LED设计与制备 期刊论文
光电子·激光, 2010, 卷号: 21, 期号: 5, 页码: 644-646
Authors:  杨广华;  毛陆虹;  黄春红;  王伟;  郭维廉
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