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Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 期号: 1, 页码: 014304
Authors:  P. Y. Zhou;  X. F. Wu;  K. Ding;  X. M. Dou;  G. W. Zha;  H. Q. Ni;  Z. C. Niu;  H. J. Zhu;  D. S. Jiang;  C. L. Zhao;  B. Q. Sun
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Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 7, 页码: Art. No. 073111
Authors:  Ding Y (Ding Y.);  Fan WJ (Fan W. J.);  Ma BS (Ma B. S.);  Xu DW (Xu D. W.);  Yoon SF (Yoon S. F.);  Liang S (Liang S.);  Zhao LJ (Zhao L. J.);  Wasiak M (Wasiak M.);  Czyszanowski T (Czyszanowski T.);  Nakwaski W (Nakwaski W.);  Ding, Y, NanyangTechnolUniv, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址:
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Vapor-phase Epitaxy  Photovoltage Spectroscopy  Photoluminescence  Modes  
Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 6, 页码: Art. No. 063107
Authors:  Xu DW;  Tong CZ;  Yoon SF;  Zhao LJ;  Ding Y;  Fan WJ;  Xu, DW, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址:
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Gallium Arsenide  Iii-v Semiconductors  Indium Compounds  Quantum Dot Lasers  Surface Emitting Lasers  Dependent Output Characteristics  Semiconductor-lasers  1.3-mu-m  Vcsels  Well  Confinement  Power