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Annihilation of deep level defects in InP through high temperature annealing 期刊论文
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 卷号: 69, 期号: 39847, 页码: 551-554
Authors:  Zhao, YW;  Dong, ZY;  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Defect  
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
Authors:  Zhao, YW;  Zhang, F;  Zhang, R;  Dong, ZY;  Wei, XC;  Zeng, YP;  Li, JM;  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Zinc Oxide  Defect  Vacancy  
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
Authors:  Wei, XC;  Zhao, YW;  Dong, ZY;  Li, JM;  Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Zinc Oxide  X-ray Diffraction  Defects  Single Crystal  
Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 3, 页码: 639-645
Authors:  Wei, XC;  Zhao, YW;  Dong, ZY;  Li, JM;  Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xcwei@semi.ac.cn
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Defects  X-ray Diffraction  Growth From Vapor  Oxides  Semiconducting Ii-vi Materials  
高温退火处理提高半绝缘VGF-GaAs单晶的电学性能 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 9, 页码: 1770-1774
Authors:  占荣;  赵有文;  于会永;  高永亮;  惠峰
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VGF法生长的低位错掺Si-GaAs单晶的缺陷和性质 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 9, 页码: 1775-1778
Authors:  于会永;  赵有文;  占荣;  高永亮
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用正电子研究原生ZnO单晶中的缺陷 期刊论文
武汉大学学报. 理学版, 2008, 卷号: 54, 期号: 3, 页码: 305-308
Authors:  王柱;  柯君玉;  李辉;  庞锦标;  戴益群;  赵有文
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多晶AlN光学性质研究 期刊论文
光散射学报, 2008, 卷号: 20, 期号: 3, 页码: 245-248
Authors:  周立;  陈涌海;  王占国;  赵有文
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掺Sb的ZnO单晶的缺陷和性质研究 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 10, 页码: 1988-1991
Authors:  张瑞;  张方;  赵有文;  董志远;  杨俊
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铟掺杂ZnO体单晶的生长及其性质 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 8, 页码: 1540-1543
Authors:  张璠;  赵有文;  董志远;  张瑞;  杨俊
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