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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Donor defect in P-diffused bulk ZnO single crystal
会议论文
, Rio de Janeiro, BRAZIL, 2009
作者:
Zhao YW (Zhao Youwen)
;
Zhang R (Zhang Rui)
;
Zhang F (Zhang Fan)
;
Dong ZY (Dong Zhiyuan)
;
Yang J (Yang Jun)
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
Adobe PDF(321Kb)
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浏览/下载:2268/471
  |  
提交时间:2010/10/11
Zinc Oxide
Doping
Defect
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Zhao, YW
;
Zhang, F
;
Zhang, R
;
Dong, ZY
;
Wei, XC
;
Zeng, YP
;
Li, JM
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)
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浏览/下载:1856/527
  |  
提交时间:2010/03/09
Zinc Oxide
Defect
Vacancy
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wei, XC
;
Zhao, YW
;
Dong, ZY
;
Li, JM
;
Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(308Kb)
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  |  
浏览/下载:1812/508
  |  
提交时间:2010/03/09
Zinc Oxide
X-ray Diffraction
Defects
Single Crystal
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Dong, HW (Dong, Hongwei)
;
Sun, NF (Sun, Niefeng)
;
Sun, TN (Sun, Tongnian)
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(376Kb)
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浏览/下载:1464/450
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提交时间:2010/03/29
Stimulated Current Spectroscopy
Current Transient Spectroscopy
Fe-doped Inp
Point-defects
Compensation
Temperature
Donors
Traps
Electron irradiation-induced defects in InP pre-annealed at high temperature
会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:
Zhao, YW (Zhao, Y. W.)
;
Dong, ZY (Dong, Z. Y.)
;
Deng, AH (Deng, A. H.)
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(147Kb)
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浏览/下载:1169/254
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提交时间:2010/03/29
Indium Phosphide
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects
会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:
Zhao, YW
;
Dong, ZY
;
Duan, ML
;
Sun, WR
;
Yang, ZX
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(222Kb)
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浏览/下载:1214/300
  |  
提交时间:2010/03/29
Indium Phosphide
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
2005 International Conference on Indium Phosphide and Related Materials丛书标题: CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS, Glasgow, SCOTLAND, MAY 08-12, 2005
作者:
Zhao, YW
;
Dong, ZY
;
Zhao, YW, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 10083, Peoples R China.
Adobe PDF(638Kb)
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浏览/下载:1499/383
  |  
提交时间:2010/03/29
Encapsulated Czochralski Inp
Semiconductor Compound-crystals
Stimulated Current Spectroscopy
Current Transient Spectroscopy
Deep-level Defects
Annealing Ambient
Point-defects
Fe
Phosphide
Donors
Annealing ambient controlled deep defect formation in InP
会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:
Zhao YW
;
Dong ZY
;
Duan ML
;
Sun WR
;
Zeng YP
;
Sun NF
;
Sun TN
;
Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc
Adobe PDF(186Kb)
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浏览/下载:1408/301
  |  
提交时间:2010/10/29
Fe-doped Inp
Semiinsulating Inp
Point-defects
Pressure
Wafers
Traps
Defects in GaSb studied by coincidence Doppler broadening measurements
会议论文
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 445-6, Kyoto, JAPAN, SEP 07-12, 2003
作者:
Hu WG
;
Wang Z
;
Dai YQ
;
Wang SJ
;
Zhao YW
;
Hu WG Wuhan Univ Dept Phys Wuhan 430072 Peoples R China. 电子邮箱地址: wangz@whu.edu.cn
Adobe PDF(210Kb)
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浏览/下载:1309/262
  |  
提交时间:2010/10/29
Coincidence Doppler Broadening
Defects
Gasb
Positron Annihilation
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
会议论文
SMIC-XIII2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Zhao, YW
;
Dong, ZY
;
Zhang, YH
;
Li, CJ
;
Zhao, YW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(230Kb)
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收藏
  |  
浏览/下载:1237/312
  |  
提交时间:2010/03/29
Deep-level Defects
Fe-doped Inp
Grown Inp
Spectroscopy
Resonance
Wafer