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Fabrication and modulation characteristics of 1.3 mu m p-doped InAs quantum dot vertical cavity surface emitting lasers 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 8, 页码: Art. No. 085117
Authors:  Ding Y;  Fan WJ;  Xu DW;  Tong CZ;  Yoon SF;  Zhang DH;  Zhao LJ;  Wang W;  Liu Y;  Zhu NH;  Ding Y Nanyang Technol Univ Sch Elect & Elect Engn Singapore 639798 Singapore. E-mail Address: yding@ntu.edu.sg
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Speed Semiconductor-lasers  Single-mode Vcsels  Transmission  Performance  Ratio  
Fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam method 期刊论文
THIN SOLID FILMS, 2007, 卷号: 515, 期号: 22, 页码: 8297-8300
Authors:  Xu XS (Xu Xingsheng);  Chen HD (Chen Hongda);  Xiong ZG (Xiong Zhigang);  Jin AZ (Jin Aizi);  Gu CZ (Gu Changzhi);  Cheng BY (Cheng Bingying);  Zhang DZ (Zhang Daozhong);  Xu, XS, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: xsxu@red.semi.ac.cn
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Photonic Crystal  
A comparison between contactless electroreflectance and photoreflectance spectra from n-doped GaAs on a semi-insulating GaAs substrate 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 卷号: 21, 期号: 10, 页码: 1467-1471
Authors:  Jin P (Jin Peng);  Pan SH (Pan S. H.);  Li YG (Li Y. G.);  Zhang CZ (Zhang C. Z.);  Wang ZG (Wang Z. G.);  Jin, P, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: pengjin@red.semi.ac.cn
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Franz-keldysh Oscillations  Differential Photoreflectance  Modulation Spectroscopy  Fourier Transformation  Interfaces  Surface  
A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 卷号: 21, 期号: 6, 页码: 786-789
Authors:  Jin P;  Pan SH;  Li YG;  Zhang CZ;  Wang ZG;  Jin, P, Nankai Univ, Dept Phys, Tianjin 300071, Peoples R China. E-mail: pengjin@red.semi.ac.cn
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Delta-doped Gaas  Franz-keldysh Oscillations  Built-in Field  Fermi-level  Photoreflectance  Surface  Spectroscopy  
1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 11, 页码: Art.No.111105
Authors:  Han, Q;  Yang, XH;  Niu, ZC;  Ni, HQ;  Xu, YQ;  Zhang, SY;  Du, Y;  Peng, LH;  Zhao, H;  Tong, CZ;  Wu, RH;  Wang, QM;  Han, Q, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hanqin@red.semi.ac.cn
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Quantum-well Lasers  
Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation 期刊论文
MICROELECTRONICS JOURNAL, 2004, 卷号: 35, 期号: 4, 页码: 353-355
Authors:  Wang, JY;  Ji, GR;  Jin, P;  Zhao, LJ;  Zhang, CZ;  Wang, JY, Bewing Univ Technol, Coll Appl Sci, Beijing 100022, Peoples R China. 电子邮箱地址: wangjiyou@bjut.edu.cn
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Upconversion  
Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation (vol 35, pg 353, 2004) 期刊论文
MICROELECTRONICS JOURNAL, 2004, 卷号: 35, 期号: 7, 页码: 627-627
Authors:  Wang JY;  Ji GR;  Jin P;  Zhao LJ;  Zhang CZ;  Wang, JY, Beijing Univ Technol, Coll Appl Sci, Beijing 100022, Peoples R China. 电子邮箱地址: wangjiyou@bjut.edu.cn
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Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 7, 页码: 4169-4172
Authors:  Jin P;  Meng XQ;  Zhang ZY;  Li CM;  Xu B;  Liu FQ;  Wang ZG;  Li YG;  Zhang CZ;  Pan SH;  Jin P,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: pengjin@red.semi.ac.cn
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Franz-keldysh Oscillations  Microscopy  Islands  
Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance 期刊论文
APPLIED SURFACE SCIENCE, 2003, 卷号: 218, 期号: 1-4, 页码: 210-214
Authors:  Jin P;  Pan SH;  Li YG;  Zhang CZ;  Wang ZG;  Jin P,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Sulfur Passivation  Franz-keldysh Oscillations  Undoped-n(+) Type Gaas  Complex Fourier Transformation  Franz-keldysh Oscillations  Gaas(001) Surfaces  Gaas(100)  Photoemission  Spectroscopy  Enhancement  
Modulation spectroscopy of GaAs covered by InAs quantum dots 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 7, 页码: 1010-1012
Authors:  Jin P;  Meng XQ;  Zhang ZY;  Li CM;  Qu SC;  Xu B;  Liu FQ;  Wang ZG;  Li YG;  Zhang CZ;  Pan SH;  Jin P,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Franz-keldysh Oscillations  Microscopy  Surfaces  Islands  Layer