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Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 260, 期号: 3-4, 页码: 388-393
Authors:  Liu JP;  Zhang BS;  Wu M;  Li DB;  Zhang JC;  Jin RQ;  Zhu JJ;  Chen J;  Wang JF;  Wang YT;  Yang H;  Liu, JP, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(335Kb)  |  Favorite  |  View/Download:981/330  |  Submit date:2010/03/09
Triple-axis X-ray Diffraction  
Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 257, 期号: 3-4, 页码: 321-325
Authors:  Zhang ZC;  Chen YH;  Li DB;  Zhang FQ;  Yang SY;  Ma BS;  Sun GS;  Wang ZG;  Zhang XP;  Zhang ZC,Chinese Acad Sci,Lab Semicond Mat Sci,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(332Kb)  |  Favorite  |  View/Download:1098/371  |  Submit date:2010/08/12
Substrate  Heteroepitaxy  Low Pressure Chemical Vapor Deposition  Semiconducting Silicon Carbide  Compliant Substrate  Critical Thickness  Silicon  Relaxation  Mechanism  Defects  Layers