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A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5, 页码: 53701
Authors:  Zhao DG;  Zhang S;  Jiang DS;  Zhu JJ;  Liu ZS;  Wang H;  Zhang SM;  Zhang BS;  Yang H;  Zhao, DG (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China, dgzhao@red.semi.ac.cn
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Surface Photovoltage Spectroscopy  Iii-nitrides  
Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 9, 页码: Art. No. 094903
Authors:  Li MC;  Qiu YX;  Liu GJ;  Wang YT;  Zhang BS;  Zhao LC;  Li MC Harbin Inst Technol Sch Mat Sci & Engn POB 405 Harbin 150001 Peoples R China. E-mail Address: mcli@hit.edu.cn
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X-ray-diffraction  Molecular-beam-epitaxy  Films  Misfit  
Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 96, 期号: 9, 页码: 4930-4934
Authors:  Song SF;  Chen WD;  Zhang CG;  Bian LF;  Hsu CC;  Ma BS;  Li GH;  Zhu JJ;  Song, SF, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: sfsong@red.semi.ac.cn
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Doped Gan