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A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe 期刊论文
CHINESE PHYSICS LETTERS, 2013, 卷号: 30, 期号: 10, 页码: 104205
Authors:  Chen, P;  Zhao, DG;  Feng, MX;  Jiang, DS;  Liu, ZS;  Zhang, LQ;  Li, DY;  Liu, JP;  Wang, H;  Zhu, JJ;  Zhang, SM;  Zhang, BS;  Yang, H
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Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 6, 页码: 1741-1744
Authors:  Zhao DS (Zhao De-Sheng);  Zhang SM (Zhang Shu-Ming);  Duan LH (Duan Li-Hong);  Wang YT (Wang Yu-Tian);  Jiang DS (Jiang De-Sheng);  Liu WB (Liu Wen-Bao);  Zhang BS (Zhang Bao-Shun);  Zhao, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址:
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Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Authors:  Wang JF (Wang Jian-Feng);  Zhang BS (Zhang Bao-Shun);  Zhang JC (Zhang Ji-Cai);  Zhu JJ (Zhu Jian-Jun);  Wang YT (Wang Yu-Tian);  Chen J (Chen Jun);  Liu W (Liu Wei);  Jiang DS (Jiang De-Sheng);  Yao DZ (Yao Duan-Zheng);  Yang H (Yang Hui);  Wang, JF, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. E-mail:
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