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边发射二维光子晶体分布反馈量子级联激光器及制备方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-03-17, 2010-08-12
Inventors:  陆全勇;  张 伟;  王利军;  高 瑜;  尹 雯;  张全德;  刘万峰;  刘峰奇;  王占国
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集成肋片式红外半导体激光器结构 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-20, 2010-08-12
Inventors:  刘俊岐;  刘峰奇;  李 路;  王利军;  王占国
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单模量子级联激光器线阵列结构 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-03-03, 2010-08-12
Inventors:  高 瑜;  刘峰奇;  刘俊岐;  王占国
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一种生长可控量子点和量子环的方法 专利
专利类型: 发明, 申请日期: 2009-10-28, 公开日期: 4011
Inventors:  赵 暕;  陈涌海;  王占国;  徐 波
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有机染料分子敏化非晶硅/微晶硅太阳电池的制备方法 专利
专利类型: 发明, 申请日期: 2009-07-22, 公开日期: 4001
Inventors:  张长沙;  王占国;  石明吉;  彭文博;  刘石勇;  肖海波;  廖显伯;  孔光临;  曾湘波
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量子点光调制器有源区结构 专利
专利类型: 发明, 申请日期: 2009-04-22, 公开日期: 3992
Inventors:  梁志梅;  金 鹏;  王占国
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Fabrication of high quality two-dimensional photonic crystal mask layer patterns 期刊论文
OPTICAL AND QUANTUM ELECTRONICS, 2009, 卷号: 41, 期号: 3, 页码: 151-158
Authors:  Peng, YS (Peng, Yin-Sheng);  Xu, B (Xu, Bo);  Ye, XL (Ye, Xiao-Ling);  Niu, JB (Niu, Jie-Bin);  Jia, R (Jia, Rui);  Wang, ZG (Wang, Zhan-Guo);  Peng, YS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: cynthia@semi.ac.cn
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Photonic Crystal  
Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well 期刊论文
NANOSCALE RESEARCH LETTERS, 2009, 卷号: 4, 期号: 11, 页码: 1315-1318
Authors:  Wang J (Wang Jun);  Li SS (Li Shu-Shen);  Lu YW (Lue Yan-Wu);  Liu XL (Liu Xiang-Lin);  Yang SY (Yang Shao-Yan);  Zhu QS (Zhu Qin-Sheng);  Wang ZG (Wang Zhan-Guo);  Wang, J, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: junwang07@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
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Binding Energy  
Holographic fabricated photonic-crystal distributed-feedback quantum cascade laser with near-diffraction-limited beam quality 期刊论文
OPTICS EXPRESS, 2009, 卷号: 17, 期号: 21, 页码: 18900-18905
Authors:  Lu QY (Lu, Quan-Yong);  Zhang W (Zhang, Wei);  Wang LJ (Wang, Li-Jun);  Liu JQ (Liu, Jun-Qi);  Li L (Li, Lu);  Liu FQ (Liu, Feng-Qi);  Wang ZG (Wang, Zhan-Guo);  Lu, QY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: fqliu@red.semi.ac.cn
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Operation  
CVD制备SiO_x纳米线的各个生长阶段的直接实验证据 期刊论文
科学通报, 2009, 卷号: 54, 期号: 19, 页码: 2988-2992
Authors:  吴燕;  黄胜利;  朱贤方;  李论雄;  王占国;  王连洲
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