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| 无权访问的条目 期刊论文 作者: Sun LL; Yan FW; Zhang HX; Wang JX; Zeng YP; Wang GH; Li JM; Sun, LL, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. E-mail Address: lilisuny@sohu.com Adobe PDF(387Kb)  |  收藏  |  浏览/下载:1084/330  |  提交时间:2010/04/03 |
| 无权访问的条目 期刊论文 作者: Hu Q; Wei TB; Duan RF; Yang JK; Huo ZQ; Lu TC; Zeng YP; Hu Q Sichuan Univ Minist Educ Dept Phys Chengdu 610064 Peoples R China. E-mail Address: lutiecheng@scu.edu.cn; ypzeng@red.semi.ac.cn Adobe PDF(1214Kb)  |  收藏  |  浏览/下载:1322/305  |  提交时间:2010/03/08 |
| 无权访问的条目 期刊论文 作者: Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM; Sun LL Chinese Acad Sci Inst Semicond Semicond Lighting Technol Res & Dev Ctr Beijing 100083 Peoples R China. E-mail Address: lilisun@semi.ac.cn Adobe PDF(220Kb)  |  收藏  |  浏览/下载:1197/287  |  提交时间:2010/03/08 |
| 无权访问的条目 期刊论文 作者: Sun LL; Yan FW; Zhang HX; Wang JX; Zeng YP; Wang GH; Li JM; Sun LL Chinese Acad Sci Inst Semicond Semicond Lighting Technol Res & Dev Ctr Beijing 100083 Peoples R China. E-mail Address: lilisun@semi.ac.cn Adobe PDF(723Kb)  |  收藏  |  浏览/下载:1057/330  |  提交时间:2010/03/08 |
| 无权访问的条目 期刊论文 作者: Sun L; Zhou WZ; Yu GL; Shang LY; Gao KH; Zhou YM; Lin T; Cui LJ; Zeng YP; Chu JH; Sun L Chinese Acad Sci Shanghai Inst Tech Phys Natl Lab Infrared Phys Shanghai 200083 Peoples R China. E-mail Address: yug@mail.sitp.ac.cn Adobe PDF(403Kb)  |  收藏  |  浏览/下载:1293/327  |  提交时间:2010/03/08 |
| 无权访问的条目 期刊论文 作者: Wei TB; Hu Q; Duan RF; Wang JX; Zeng YP; Li JM; Yang Y; Liu YL; Wei TB Chinese Acad Sci Semicond Lighting Technol Res & Dev Ctr Inst Semicond Beijing 100083 Peoples R China. E-mail Address: tbwei@semi.ac.cn Adobe PDF(292Kb)  |  收藏  |  浏览/下载:1127/294  |  提交时间:2010/03/08 |
| In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文 SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007 作者: Sun, GS; Zhao, YM; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP; Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. Adobe PDF(273Kb)  |  收藏  |  浏览/下载:1635/274  |  提交时间:2010/03/09 In-situ Doping Boron Aluminum Memory Effects Hot-wall Lpcvd 4h-sic |
| Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文 SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007 作者: Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Li, JM; Zeng, YP; Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. Adobe PDF(246Kb)  |  收藏  |  浏览/下载:1876/307  |  提交时间:2010/03/09 Silicon Carbide Aluminum Nitride Buffer Layer Lpcvd |
| 无权访问的条目 期刊论文 作者: Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM; Sun LL Chinese Acad Sci Inst Semicond Semicond Lighting Technol Res & Dev Ctr Beijing 100083 Peoples R China. E-mail Address: lilisun@semi.ac.cn Adobe PDF(541Kb)  |  收藏  |  浏览/下载:1158/443  |  提交时间:2010/03/08 |
| 无权访问的条目 期刊论文 作者: Sun LL; Yan FW; Wang JX; Zeng YP; Wang GH; Li JM; Sun LL Chinese Acad Sci Inst Semicond Semicond Lighting Technol Res & Dev Ctr Beijing 100083 Peoples R China. E-mail Address: lilisun@semi.ac.en Adobe PDF(218Kb)  |  收藏  |  浏览/下载:917/302  |  提交时间:2010/03/08 |