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X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 10, 页码: 1865-1870
Authors:  Wang Xiaoliang;  Liu Xinyu;  Hu Guoxin;  Wang Junxi;  Ma Zhiyong;  Wang Cuimei;  Li Jianping;  Ran Junxue;  Zheng Yingkui;  Qian He;  Zeng Yiping;  Li Jinmin
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