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The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Ran, JX;  Wang, XL;  Hu, GX;  Li, JP;  Wang, JX;  Wang, CM;  Zeng, YP;  Li, JM;  Ran, JX, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(202Kb)  |  收藏  |  浏览/下载：1645/528  |  提交时间：2010/03/29
Aln  Impurities  Donor  
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Gao F;  Lin YX;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
Adobe PDF(96Kb)  |  收藏  |  浏览/下载：1704/419  |  提交时间：2010/11/15
Annealing  Molecular Beam Epitaxy  Germanium Silicon Alloys  Semiconducting Materials  Strain Relaxation  
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Zhang JP;  Sun DZ;  Li XB;  Wang XL;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(127Kb)  |  收藏  |  浏览/下载：1311/307  |  提交时间：2010/11/15
Stress  Growth