SEMI OpenIR

Browse/Search Results:  1-3 of 3 Help

Filters    
Selected(0)Clear Items/Page:    Sort:
Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 18, 页码: 181116
Authors:  Zhang SG (Zhang S. G.);  Zhang XW (Zhang X. W.);  Yin ZG (Yin Z. G.);  Wang JX (Wang J. X.);  Dong JJ (Dong J. J.);  Gao HL (Gao H. L.);  Si FT (Si F. T.);  Sun SS (Sun S. S.);  Tao Y (Tao Y.)
Adobe PDF(914Kb)  |  Favorite  |  View/Download:1275/597  |  Submit date:2012/02/21
Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 9, 页码: Art.No.092114
Authors:  Wang H (Wang H.);  Huang Y (Huang Y.);  Sun Q (Sun Q.);  Chen J (Chen J.);  Wang LL (Wang L. L.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Zhang SM (Zhang S. M.);  Jiang DS (Jiang D. S.);  Wang YT (Wang Y. T.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wangh@red.semi.ac.cn
Adobe PDF(210Kb)  |  Favorite  |  View/Download:1056/320  |  Submit date:2010/04/11
X-ray-diffraction  Electron-transport  Epitaxial Gan  Band-gap  Dislocations  Sapphire  Aln  
Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 11, 页码: Art.No.112106
Authors:  Zhao DG (Zhao D. G.);  Yang H (Yang Hui);  Zhu JJ (Zhu J. J.);  Jiang DS (Jiang D. S.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Wang YT (Wang Y. T.);  Liang JW (Liang J. W.);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
Adobe PDF(66Kb)  |  Favorite  |  View/Download:1243/412  |  Submit date:2010/04/11
X-ray-diffraction  Scattering  Growth  Layers