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Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale partial-gate 期刊论文
NANOTECHNOLOGY, 2018, 卷号: 29, 期号: 41, 页码: 415203
Authors:  Wenyuan Yang ;   Dong Pan ;   Rui Shen ;   Xinzhe Wang ;   Jianhua Zhao ;   Qing Chen
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