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Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
SOLID-STATE ELECTRONICS, 2013, 卷号: 83, 页码: 66-70
Authors:  Wang, Lanxiang;  Su, Shaojian;  Wang, Wei;  Gong, Xiao;  Yang, Yue;  Guo, Pengfei;  Zhang, Guangze;  Xue, Chunlai;  Cheng, Buwen;  Han, Genquan;  Yeo, Yee-Chia
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Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648
Authors:  Gong, Xiao;  Han, Genquan;  Liu, Bin;  Wang, Lanxiang;  Wang, Wei;  Yang, Yue;  Kong, Eugene Yu-Jin;  Su, Shaojian;  Xue, Chunlai);  Cheng, Buwen;  Yeo, Yee-Chia
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Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs 期刊论文
Electrochemical and Solid-State Letters, 2012, 卷号: 15, 期号: 6, 页码: H179-H181
Authors:  Wang, Lanxiang;  Han, Genquan;  Su, Shaojian;  Zhou, Qian;  Yang, Yue;  Guo, Pengfei;  Wang, Wei;  Tong, Yi;  Lim, Phyllis Shi Ya;  Liu, Bin;  Kong, Eugene Yu-Jing;  Xue, Chunlai;  Wang, Qiming;  Cheng, Buwen;  Yeo, Yee-Chia
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Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 33, 期号: 11, 页码: 1529-1531
Authors:  Wang LX (Wang, Lanxiang);  Su SJ (Su, Shaojian);  Wang W (Wang, Wei);  Yang Y (Yang, Yue);  Tong Y (Tong, Yi);  Liu B (Liu, Bin);  Guo PF (Guo, Pengfei);  Gong X (Gong, Xiao);  Zhang GZ (Zhang, Guangze);  Xue CL (Xue, Chunlai);  Cheng BW (Cheng, Buwen);  Han GQ (Han, Genquan);  Yeo YC (Yeo, Yee-Chia)
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Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer 期刊论文
Digest of Technical Papers - Symposium on VLSI Technology, 2012, 页码: 97-98
Authors:  Han, Genquan;  Su, Shaojian;  Wang, Lanxiang;  Zhang, Zheng;  Xue, Chunlai;  Cheng, Buwen;  Yeo, Yee-Chia;  Wang, Wei;  Gong, Xiao;  Yang, Yue;  Ivana;  Guo, Pengfei;  Guo, Cheng;  Zhang, Guangze;  Pan, Jisheng
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Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor 期刊论文
International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2012, 页码: 6210151
Authors:  Wang, Lanxiang;  Han, Genquan;  Su, Shaojian;  Cheng, Buwen;  Yeo, Yee-Chia;  Zhou, Qian;  Yang, Yue;  Guo, Pengfei;  Wang, Wei;  Tong, Yi;  Lim, Phyllis Shi Ya;  Xue, Chunlai;  Wang, Qiming
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Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 12, 页码: 126801
Authors:  Hu WX (Hu Wei-Xuan);  Cheng BW (Cheng Bu-Wen);  Xue CL (Xue Chun-Lai);  Su SJ (Su Shao-Jian);  Wang QM (Wang Qi-Ming)
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Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜 期刊论文
物理学报, 2011, 卷号: 60, 期号: 2, 页码: 028101-1-028101-5
Authors:  苏少坚;  汪巍;  张广泽;  胡炜玄;  白安琪;  薛春来;  左玉华;  成步文;  王启明
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外延生长Gel-xSnx合金的研究进展 期刊论文
材料导报, 2010, 卷号: 24, 期号: 11上, 页码: 90-93,117
Authors:  苏少坚;  汪巍;  胡炜玄;  张广泽;  薛春来;  左玉华;  成步文;  王启明
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GeSn合金的外延生长方法 专利
专利类型: 发明, 专利号: CN200910088391.6, 公开日期: 2011-08-30
Inventors:  成步文;  薛春来;  左玉华;  汪巍;  胡炜玄;  苏少坚;  白安琪;  薛海韵
Adobe PDF(269Kb)  |  Favorite  |  View/Download:1106/217  |  Submit date:2011/08/30