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Temporal Differential CMOS Image Sensor for Low-Light and High-Speed Applications 会议论文
International Symposium on Photoelectronic Detection and Imaging 2011 - Advances in Imaging Detectors and Applications, Beijing, PEOPLES R CHINA, 2011
作者:  Guan N (Guan Ning);  Zhang X (Zhang Xu);  Dong Z (Dong Zan);  Wang W (Wang Wei);  Gui Y (Gui Yun);  Han JQ (Han Jianqiang);  Wang Y (Wang Yuan);  Huang BJ (Huang Beiju);  Chen HD (Chen Hongda)
Adobe PDF(516Kb)  |  收藏  |  浏览/下载：1901/510  |  提交时间：2011/12/13
High-speed analog DFB laser module operated in direct modulation for Ku-band 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7844: Art. No. 78440P 2010, Beijing, PEOPLES R CHINA, OCT 18-19, 2010
作者:  Liu Y (Liu Yu);  Man JW (Man Jiang Wei);  Han W (Han Wei);  Wang X (Wang Xin);  Yuan HQ (Yuan Hai Qing);  Zhu HL (Zhu Hong Liang);  Xie LA (Xie Liang);  Zhu NH (Zhu Ning Hua)
Adobe PDF(522Kb)  |  收藏  |  浏览/下载：6354/2742  |  提交时间：2011/07/14
Fabrication and characterization of TO packaged high-speed laser modules - art. no. 682407 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Wen, JM;  Liu, Y;  Wang, X;  Yuan, HQ;  Xie, L;  Zhu, NH;  Zhu, NH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(163Kb)  |  收藏  |  浏览/下载：1870/508  |  提交时间：2010/03/09
Equivalent Circuits  Fp Laser Modules  Dfb Laser Modules  Vcsel Modules  Through Hole (To) Packaging  
Defect influence on luminescence efficiency of GaN-based LEDs 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Li SP (Li Shuping);  Fang ZL (Fang Zhilai);  Chen HY (Chen Hangyang);  Li JC (Li Jinchai);  Chen XH (Chen Xiaohong);  Yuan XL (Yuan Xiaoli);  Sekiguchi T (Sekiguchi Takashi);  Wang QM (Wang Qiming);  Kang JY (Kang Junyong);  Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: jykang@xmu.edu.cn
Adobe PDF(142Kb)  |  收藏  |  浏览/下载：1360/288  |  提交时间：2010/03/29
Defects  
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Chen Z;  Chua SJ;  Yuan HR;  Liu XL;  Lu DC;  Han PD;  Wang ZG;  Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
Adobe PDF(225Kb)  |  收藏  |  浏览/下载：1484/329  |  提交时间：2010/10/29
Metalorganic Chemical Vapor Deposition  Semiconducting Iii-v Materials  Doped Al(x)Ga1-xn/gan Heterostructures  Carrier Confinement  Effect Transistors  Photoluminescence  Mobility  Heterojunction  Interface  Hfets  
Modulation magnesium-doping in AlGaN/GaN superlattices 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Liu XL;  Yuan HR;  Lu DC;  Wang XH;  Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(277Kb)  |  收藏  |  浏览/下载：977/178  |  提交时间：2010/10/29
Mg-doped  Algan/gan Superlattices  Resistivity  Hole Concentration  Polarization  
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE 会议论文
JOURNAL OF CRYSTAL GROWTH, 221, SAPPORO, JAPAN, JUN 05-09, 2000
作者:  Lu DC;  Wang CX;  Yuan HR;  Liu XL;  Wang XH;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat & Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(428Kb)  |  收藏  |  浏览/下载：1276/179  |  提交时间：2010/11/15
Gan  Annealing Treatment  In-doping  Movpe  Photoluminescence  Chemical-vapor-deposition  Phase Epitaxy  Buffer Layer  Films  Sapphire  
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Yuan HR;  Lu DC;  Liu XL;  Han PD;  Wang XH;  Wang D;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(302Kb)  |  收藏  |  浏览/下载：1380/179  |  提交时间：2010/10/29
Algan/gan Heterostructures  In-doping  2deg  Electron Sheet Density  X-ray Diffraction  Etching  Chemical-vapor-deposition  Molecular-beam Epitaxy  Phase Epitaxy  Mobility  Growth  Films