中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共4条，第1-4条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
SHicon-based resonant-cavity-enhanced photodetectors 会议论文
2006 3rd IEEE International Conference on Group IV Photonics, Ottawa, CANADA, SEP 13-15, 2006
作者:  Cheng BW (Cheng Buwen);  Li CB (Li Chuanbo);  Mao RW (Mao Rongwei);  Yao F (Yao Fei);  Xue CL (Xue Chunlai);  Zhang JG (Zhang Jianguo);  Shi WH (Shi Wenhua);  Zuo YH (Zuo Yuhua);  Yu JZ (Yu Jinzhong);  Wang QM (Wang Qiming);  Cheng, BW, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(288Kb)  |  收藏  |  浏览/下载：1418/338  |  提交时间：2010/03/29
High-speed  
Si-based membrane resonant cavity enhanced photodetectors 会议论文
2005 2nd IEEE International Conference on Group IV Photonics, Antwerp, BELGIUM, SEP 21-23, 2005
作者:  Cheng BW;  Yao F;  Xue CL;  Zhang JU;  Mao RW;  Li CB;  Luo LP;  Zuo YH;  Wang QM;  Cheng, BW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(481Kb)  |  收藏  |  浏览/下载：1883/368  |  提交时间：2010/03/29
1.3 Mu-m  
Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Cheng BW;  Zhang JG;  Zuo YH;  Mao RW;  Huang CJ;  Luo LP;  Yao F;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(319Kb)  |  收藏  |  浏览/下载：1155/201  |  提交时间：2010/11/15
Si-ge Alloys  Growth  Layers  
Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD 会议论文
FERROELECTRICS, 271, MADRID, SPAIN, SEP 03-07, 2001
作者:  Wang H;  Shang SX;  Yao WF;  Hou Y;  Xu XH;  Wang D;  Wang M;  Yu JZ;  Wang H Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China.
Adobe PDF(1640Kb)  |  收藏  |  浏览/下载：1026/178  |  提交时间：2010/11/15
Bi2ti2o7  Thin Film  Mocvd  (111) Orientation  Chemical-vapor-deposition  Crystal Thin-films