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Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy 期刊论文
PHYSICAL REVIEW B, 2002, 卷号: 66, 期号: 19, 页码: Art.No.195321
Authors:  Chen YH;  Ye XL;  Wang JZ;  Wang ZG;  Yang Z;  Chen YH,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Exciton Localization  Inversion Asymmetry  Common-atom  Light-hole  Heterostructures  Superlattices  Polarization  Segregation  Morphology  
Structure and photoluminescence of InGaAs quantum dots formed on an InAlAs wetting layer 期刊论文
CHINESE PHYSICS LETTERS, 2001, 卷号: 18, 期号: 10, 页码: 1411-1414
Authors:  Zhang YC;  Huang CJ;  Ye XL;  Xu B;  Ding D;  Wang JZ;  Li YF;  Liu FQ;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
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Temperature-dependence  Carrier Transfer  Lasers  Gain  
Determination of the values of hole-mixing coefficients due to interface and electric field in GaAs/AlxGa1-xAs superlattices 期刊论文
PHYSICAL REVIEW B, 2001, 卷号: 63, 期号: 11, 页码: Art.No.115317
Authors:  Ye XL;  Chen YH;  Wang JZ;  Wang ZG;  Yang Z;  Ye XL,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Giant Optical Anisotropy  Quantum-wells  Common-atom  Zincblende Semiconductors  Inversion Asymmetry  Heterostructures  
Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46
Authors:  Zhang YC;  Huang CJ;  Xu B;  Ye XL;  Ding D;  Wang JZ;  Li YF;  Liu F;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Electron-phonon Interactions  Temperature-dependence  Semiconductor Nanocrystals  Carrier Transfer  Inas  Gaas  Lasers  Islands  Growth  Gain  
In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 3, 页码: 1266-1270
Authors:  Ye XL;  Chen YH;  Wang JZ;  Xu B;  Wang ZG;  Yang Z;  Ye XL,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Zincblende Semiconductors  Difference Spectroscopy  Inversion Asymmetry  Common-atom  Light-hole  Heterostructures  Interface  
InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 89, 期号: 7, 页码: 4186-4188
Authors:  Li YF;  Wang JZ;  Ye XL;  Xu B;  Liu FQ;  Ding D;  Zhang JF;  Wang ZG;  Li YF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(143Kb)  |  Favorite  |  View/Download:855/277  |  Submit date:2010/08/12
Matrix  Islands  Ingaas