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高质量稀磁半导体(Ga, Mn)Sb单晶薄膜分子束外延生长 期刊论文
物理学报, 2015, 卷号: 64, 期号: 7, 页码: 077501
Authors:  祝梦遥;  鲁军;  马佳淋;  李利霞;  王海龙;  潘东;  赵建华
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无权访问的条目 学位论文
Authors:  王海龙
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Measurement of the transmission magnetic circular dichroism of Ga1-xMnxAs epilayers using a built-in p-i-n photodiode 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 8, 页码: 083506
Authors:  He, ZX;  Zheng, HZ;  Wang, HL;  Zhao, JH
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What has been measured by reflection magnetic circular dichroism in Ga1-xMnxAs/GaAs structures? 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 7, 页码: 077801
Authors:  He, ZX;  Zheng, HZ;  Huang, XJ;  Wang, HL;  Zhao, JH
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Structure and Magnetic Properties of (In, Mn) As Based Core-Shell Nanowires Grown on Si(111) by Molecular-Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 7, 页码: 078103
Authors:  Pan, D;  Wang, SL;  Wang, HL;  Yu, XZ;  Wang, XL;  Zhao, JH
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simultaneous measurements of magnetization and electrical transport signal by a reconstructed superconducting quantum interference device magnetometer 期刊论文
Rev Sci Instrum., 2013, 卷号: 84, 期号: 8, 页码: 086103
Authors:  Wang HL1, Yu XZ, Wang SL, Chen L, Zhao JH.
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Evidence for Structural Phase Transitions Induced by the Triple Phase Line Shift in Self-Catalyzed GaAs Nanowires 期刊论文
NANO LETTERS, 2012, 卷号: 12, 期号: 10, 页码: 5436-5442
Authors:  Yu XZ (Yu, Xuezhe);  Wang HL (Wang, Hailong);  Lu J (Lu, Jun);  Zhao JH (Zhao, Jianhua);  Misuraca J (Misuraca, Jennifer);  Xiong P (Xiong, Peng);  von Molnar S (von Molnar, Stephan)
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Multilayer Antireflection Coating for Triple Junction Solar Cells (vol 28, 047802, 2011) 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 1, 页码: 19901
Authors:  Zhan, F;  Wang, HL;  He, JF;  Wang, J;  Huang, SS;  Ni, HQ;  Niu, ZC
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GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 33, 页码: 335102
Authors:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y;  Wang LJ;  Yu Y;  Ni HQ;  Xu YQ;  Niu ZC;  He, JF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China,
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1.3 Mu-m  Strain Relief  Lasers  Substrate  Photoluminescence  Dislocations  Operation  Range  
InGaAs(Sb)/GaAs异变低维材料长波长激光器 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  王海莉
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分子束外延  异变  Ingaas量子阱  Inas量子点  激光器