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The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S 会议论文
ICO20 Materials and Nanostructures丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:  Li J;  An JM;  Wang HJ;  Xia JL;  Gao DS;  Hu XW;  Li, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(423Kb)  |  收藏  |  浏览/下载：1413/412  |  提交时间：2010/03/29
Porous Silicon  
Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As 会议论文
IEEE TRANSACTIONS ON MAGNETICS, Madrid, SPAIN, MAY 04-08, 2008
作者:  Lu J;  Bi JF;  Wang WZ;  Gan HD;  Meng HJ;  Deng JJ;  Zheng HZ;  Zhao JH;  Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(461Kb)  |  收藏  |  浏览/下载：1574/396  |  提交时间：2010/03/09
Magnetic Analysis