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4H -SiC 基 SiO 2和 Al 2O3栅介质层的研究 学位论文
, 北京: 中国科学院半导体研究所, 2016
Authors:  田丽欣
Adobe PDF(3926Kb)  |  Favorite  |  View/Download:416/29  |  Submit date:2016/12/05
Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 12, 页码: 128104
Authors:  Li-Xin Tian;  Feng Zhang;  Zhan-Wei Shen;  Guo-Guo Yan;  Xing-Fang Liu;  Wan-Shun Zhao;  Lei Wang;  Guo-Sheng Sun;  Yi-Ping Zeng
Adobe PDF(1301Kb)  |  Favorite  |  View/Download:146/3  |  Submit date:2017/03/10