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Optical transitions of positively charged excitons and biexcitons in single InAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 10, 页码: Art. No. 103716
Authors:  Chang XY;  Dou XM;  Sun BQ;  Xiong YH;  Niu ZC;  Ni HQ;  Jiang DS;  Chang, XY, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. E-mail Address: bqsun@semi.ac.cn
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Fine-structure  Trion  
Electron spin relaxation by nuclei and holes in single InAs quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 22, 页码: Art.No.221903
Authors:  Dou XM;  Chang XY;  Sun BQ;  Xiong YH;  Niu ZC;  Ni HQ;  Jiang DS;  Dou, XM, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: bqsun@semi.ac.cn
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Electron Spin Polarisation  
Photon localization and lasing in disordered GaNxAs1-x optical superlattices 期刊论文
PHYSICAL REVIEW B, 2006, 卷号: 73, 期号: 19, 页码: Art.No.195112
Authors:  Sun BQ;  Jiang DS;  Sun, BQ, Chinese Acad Sci, Inst Semicond, SKLSM, POB 911, Beijing 100083, Peoples R China. E-mail: bqsun@red.semi.ac.cn
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Random Laser  Scattering  Media  Light  Absorption  Cavities  Gain  
空间有序的量子点超晶格的红外吸收 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 11, 页码: 2092-2096
Authors:  孙永伟;  马文全;  杨晓杰;  屈玉华;  侯识华;  江德生;  孙宝权;  陈良惠
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Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 3-4, 页码: 336-341
Authors:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang, DS, CAS, Inst Semicond, SKLSM, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
Authors:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates 期刊论文
SOLID STATE COMMUNICATIONS, 2004, 卷号: 132, 期号: 10, 页码: 707-711
Authors:  Bian LF;  Jiang DS;  Tan PH;  Lu SL;  Sun BQ;  Li LH;  Harmand, JC;  Bian, LF, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: lfbian@pdi-berlin.de
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Gaassbn Epilayer  
Theory and experiment of two-photon 'direct' interference for type-II spontaneous parametric down-conversion with an ultrafast pulse laser pump 期刊论文
JOURNAL OF OPTICS B-QUANTUM AND SEMICLASSICAL OPTICS, 2002, 卷号: 4, 期号: 5, 页码: 260-264
Authors:  Li SL;  Liu B;  Sun BQ;  Jiang DS;  Xu ZY;  Li SL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Spontaneous Parametric Down-conversion  Femtosecond Pulse Laser  Entangled Two-photon State  Double-slit Experiments  Coincidence Measurements  Ghost Interference  Quantum  Entanglement  Diffraction  Visibility  Coherence  Fringes  Light  
Spatial interference effect of two-photon in femtosecond-pulse pumped spontaneous parametric down-conversion 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 3, 页码: 345-347
Authors:  Lu SL;  Sun BQ;  Liu B;  Jiang DS;  Xu ZY;  Lu SL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Double-slit Experiments  Coincidence Measurements  Ghost Interference  Quantum  Light  Distinguishability  Entanglement  Coherence  
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
Authors:  Jiang DS;  Liang XG;  Sun BQ;  Bian L;  Li LH;  Pan Z;  Wu RG;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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Luminescence  Localization