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A VSLMS Style Tap-length Learning Algorithm for Structure Adaptation 会议论文
2008 11TH IEEE SINGAPORE INTERNATIONAL CONFERENCE ON COMMUNICATION SYSTEMS (ICCS), Guangzhou, PEOPLES R CHINA, NOV 19-21, 2008
Authors:  Yu, HM;  Liu, ZL;  Li, GS;  Yu, HM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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Adaptive Filter  Equalizer  Structure Adaptive  Fractional Tap-length  
Fabrication of improved FD SOIMOSFETs for suppressing edge effect 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Wang, N;  Li, N;  Liu, ZL;  Yu, F;  Li, GH;  Wang, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(933Kb)  |  Favorite  |  View/Download:868/227  |  Submit date:2010/03/09
Soi  Mosfet  
A silicon capacitive microphone based on oxidized porous silicon sacrificial technology 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
Authors:  Ning, J;  Liu, ZL;  Liu, HZ;  Ge, YC;  Ning, J, Chinese Acad Sci, Microelect R&D Ctr, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(151Kb)  |  Favorite  |  View/Download:710/186  |  Submit date:2010/03/29
Silicon Capacitive Microphone  Oxidized Porous Silicon  Sacrificial Layer  
Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
Authors:  Zheng, ZS;  Liu, ZL;  Zhang, GQ;  Li, N;  Fan, K;  Zheng, ZS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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The status, limits and countermeasures in the development of the silicon microelectronics industry 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
Authors:  Liu, ZL;  Liu, ZL, Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China.
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Silicon Microelectronics  Cmos  Theoretic Limit  Technologic Limit  Economic Limit  
Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
Authors:  Li, N;  Zhang, GQ;  Liu, ZL;  Fan, K;  Zheng, ZS;  Lin, Q;  Zhang, ZX;  Lin, CL;  Li, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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Simox  Fluorine  Ionizing Radiation  
Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
Authors:  Zhang, GQ;  Liu, ZL;  Li, N;  Zhen, ZS;  Liu, GH;  Lin, Q;  Zhang, ZX;  Lin, CL;  Zhang, GQ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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Fluorine  Simox  Charge Trapping  Radiation  Sio2  
A simulation model of body contact structure in PD SOI analogue circuit 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
Authors:  Jiang, F;  Liu, ZL;  Jiang, F, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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Pid Soi Technology  Body Contact  
2 x 2 electrooptical switch in silicon-on-insulator waveguide 会议论文
2003 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, Kowloon, PEOPLES R CHINA, DEC 16-18, 2003
Authors:  Yan QF;  Yu JZ;  Chen SW;  Fan ZC;  Xia JS;  Liu ZL;  Yan QF Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
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Devices  
Nano-layer structure of silicon-on-insulator materials 会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
Authors:  Wang X;  Chen M;  Chen J;  Dong YN;  Liu XH;  He P;  Tian LL;  Liu ZL;  Chen J Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Ion Beam Lab 865 Changning Rd Shanghai 200050 Peoples R China.
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Soi  Nanostructure  Microelectronic Materials