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无权访问的条目 期刊论文
作者:  Iqbal J;  Liu XF;  Majid A;  Yu DP;  Yu RH;  Iqbal J Tsinghua Univ Dept Mat Sci & Engn Adv Mat Lab Beijing 100084 Peoples R China. E-mail Address: javedsaggu73@yahoo.com;  rhyu@tsinghua.edu.cn
Adobe PDF(750Kb)  |  收藏  |  浏览/下载：1396/387  |  提交时间：2010/03/08
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Sun, GS;  Zhao, YM;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)  |  收藏  |  浏览/下载：1616/274  |  提交时间：2010/03/09
In-situ Doping  Boron  Aluminum  Memory Effects  Hot-wall Lpcvd  4h-sic  
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  收藏  |  浏览/下载：1859/307  |  提交时间：2010/03/09
Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
无权访问的条目 期刊论文
作者:  Wang H;  Zhu HL;  Chen XF;  Kong DH;  Wang LS;  Zhang W;  Liu Y;  Zhao LJ;  Wang W;  Wang H Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: whuan21@semi.ac.cn
Adobe PDF(411Kb)  |  收藏  |  浏览/下载：952/284  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Zhou, W;  Yang, JL;  Sun, GS;  Liu, XF;  Yang, FH;  Li, JM;  Zhou, W, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: jlyang@semi.ac.cn
Adobe PDF(750Kb)  |  收藏  |  浏览/下载：1101/423  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Zhao, YM;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, WS;  Wang, L;  Li, JM;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: ymzhao@semi.ac.cn
Adobe PDF(4488Kb)  |  收藏  |  浏览/下载：978/232  |  提交时间：2010/03/08
Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes 会议论文
2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, Sanya, PEOPLES R CHINA, JAN 06-09, 2008
作者:  Zhou, W;  Yang, JL;  Sun, GS;  Liu, XF;  Yang, FH;  Li, JM;  Zhou, W, CAS, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(511Kb)  |  收藏  |  浏览/下载：2018/511  |  提交时间：2010/03/09
Bulge Test Fracture Property  Silicon Carbide Thin Films  Weibull Distribution Function  
无权访问的条目 期刊论文
作者:  Liu, YH;  Wang, XF;  Li, SS;  Liu, YH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: liuyh@semi.ac.cn
Adobe PDF(121Kb)  |  收藏  |  浏览/下载：787/252  |  提交时间：2010/03/08
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Ji, G;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, YM;  Wang, L;  Zhao, WS;  Zeng, YP;  Ji, G, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(1783Kb)  |  收藏  |  浏览/下载：1345/225  |  提交时间：2010/03/09
Simulation and fabrication of the SiC-based clamped-clamped filter 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Zhao, YM;  Ning, J;  Sun, GS;  Liu, XF;  Wang, L;  Ji, G;  Zhao, WS;  Li, JM;  Yang, FH;  Zhao, YM, Chinese Acad Sci, Inst Semicond, State Key Labs Transducer Technol, Beijing 100083, Peoples R China.
Adobe PDF(4954Kb)  |  收藏  |  浏览/下载：1380/274  |  提交时间：2010/03/09
Micromechanical Resonators  Frequency