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High Efficiency Quantum Cascade Lasers Based on Excited-States Injection 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2018, 卷号: 30, 期号: 4, 页码: 299-302
Authors:  Chuan-Wei Liu ;   Jin-Chuan Zhang;   Feng-Min Cheng ;   Yue Zhao;   Ning Zhuo;   Shen-Qiang Zhai;  Li-Jun Wang;   Jun-Qi Liu;   Shu-Man Liu;   Feng-Qi Liu;   Zhan-Guo Wang
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Optical fiber ocean bottom vector magnetometer array 期刊论文
Optical Engineering, 2018, 卷号: 57, 期号: 10, 页码: 107106
Authors:  Wentao Zhang;  Zhaogang Wang;  Wenzhu Huang;  Fang Li
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Directly Modulated Semiconductor Lasers 期刊论文
IEEE Journal of Selected Topics in Quantum Electronics, 2018, 卷号: 24, 期号: 1, 页码: 1500219
Authors:  Ning Hua Zhu;   Member,IEEE;   Zhan Shi;   Zhi Ke Zhang;   Yi Ming Zhang;   Can Wen Zou;   Ze Ping Zhao;   Yu Liu;   Wei Li;   Member,IEEE;   Ming Li;   Member,IEEE
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Effect of localizaiton states on the electroluminescence spectral width of blue-green light emitting InGaN/GaN multiple quantum wells 期刊论文
Journal of Vacuum Science & Technology A, 2015, 卷号: 33, 期号: 6, 页码: 061502
Authors:  Wei Liu;  De Gang Zhao;  De Sheng Jiang;  Ping Chen;  Zong Shun Liu;  Jian Jun Zhu;  Xiang Li;  Ming Shi;  Dan Mei Zhao;  Jian Ping Liu;  Shu Ming Zhang;  Hui Wang;  Hui Yang
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Study on the response of InAs nanowire transistors to H2O and NO2 期刊论文
Sensors and Actuators B-Chemical Volume, 2015, 卷号: 209, 页码: 456–461
Authors:  Xintong Zhang;  Mengqi Fu;  Xing Li;  Tuanwei Shi;  Zhiyuan Ning;  Xiaoye Wang
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High hole mobility GeSn on insulator formed by self-organized seeding lateral growth 期刊论文
Journal of Physics D: Applied Physics, 2015, 卷号: 48, 页码: 445103
Authors:  Zhi Liu;  Juanjuan Wen;  Xu Zhang;  Chuanbo Li;  Chunlai Xue;  Yuhua Zuo;  Buwen Cheng;  Qiming Wang
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Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn 期刊论文
Solid-State Electronics, 2015, 卷号: 114, 页码: 178–181
Authors:  Xu Zhang;  Dongliang Zhang;  Jun Zheng;  Zhi Liu;  Chao He;  Chunlai Xue;  Guangze Zhang;  Chuanbo Li;  Buwen Cheng;  Qiming Wang
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Ni(Ge1-x-ySixSny) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2015, 卷号: 36, 期号: 9, 页码: 878-880
Authors:  Jun Zheng;  Suyuan Wang;  Xu Zhang;  Zhi Liu;  Chunlai Xue;  Chuanbo Li;  Yuhua Zuo;  Buwen Cheng;  Qiming Wang
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Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  L. C. Le;  X. J. Li;  X. G. He;  J. P. Liu;  H. Yang;  Y. T. Zhang;  G. T. Du
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Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 625, 页码: 266–270
Authors:  W. Liu;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  J.J. Zhu;  M. Shi;  D.M. Zhao;  X. Li;  J.P. Liu;  S.M. Zhang;  H. Wang;  H. Yang
Adobe PDF(801Kb)  |  Favorite  |  View/Download:245/4  |  Submit date:2016/03/23