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Molecular beam epitaxial growth of AlSb/InAsSb heterostructures 期刊论文
APPLIED SURFACE SCIENCE, 2014, 卷号: 313, 页码: 479-483
Authors:  Zhang, YW;  Zhang, Y;  Guan, M;  Cui, LJ;  Li, YB;  Wang, BQ;  Zhu, ZP;  Zeng, YP
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Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (001) substrates 期刊论文
APPLIED SURFACE SCIENCE, 2012, 卷号: 258, 期号: 17, 页码: 6571-6575
Authors:  Li, YB;  Zhang, Y;  Zhang, YW;  Wang, BQ;  Zhu, ZP;  Zeng, YP
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The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity 期刊论文
APPLIED SURFACE SCIENCE, 2006, 卷号: 252, 期号: 12, 页码: 4104-4109
Authors:  Wang XF;  Zeng YP;  Wang BQ;  Zhu ZP;  Du XQ;  Li M;  Chang BK;  Wang, XF, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: xiaofw@red.semi.ac.cn
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Structure  Nea  Integrated Photosensitivity  Gaas  Cs : o  Spectral Response  Nea Photocathodes  Layer Thickness  Cs  Surface  Photoemission  System