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Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  收藏  |  浏览/下载：1860/307  |  提交时间：2010/03/09
Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
Polarization-Independent Micro-Ring Resonator on Silicon-on-Insulator 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Geng, MM;  Jia, LX;  Zhang, L;  Yang, L;  Liu, YL;  Li, F;  Geng, MM, Chinese Acad Sci, Inst Semicond, Optoelect Syst Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(607Kb)  |  收藏  |  浏览/下载：1630/309  |  提交时间：2010/03/09
Wave-guides  Devices  Design  
Research of Face Location System Based on Human Vision Simulations 会议论文
INTERNATIONAL CONFERENCE ON INTELLIGENT COMPUTATION TECHNOLOGY AND AUTOMATION, Changsha, PEOPLES R CHINA, OCT 20-22, 2008
作者:  Mo, HY;  Li, WJ;  Lai, JL;  Dai, L;  Mo, HY, Chinese Acad Sci, Inst Semicond, Lab Artificial Neural Networks, Beijing 100083, Peoples R China.
Adobe PDF(300Kb)  |  收藏  |  浏览/下载：1433/297  |  提交时间：2010/03/09
Face Location  Human Vision  Low-pass Filter  Image Segmentation  Region Selecting And Merging  
Simulation and fabrication of the SiC-based clamped-clamped filter 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Zhao, YM;  Ning, J;  Sun, GS;  Liu, XF;  Wang, L;  Ji, G;  Zhao, WS;  Li, JM;  Yang, FH;  Zhao, YM, Chinese Acad Sci, Inst Semicond, State Key Labs Transducer Technol, Beijing 100083, Peoples R China.
Adobe PDF(4954Kb)  |  收藏  |  浏览/下载：1381/274  |  提交时间：2010/03/09
Micromechanical Resonators  Frequency  
An Embedded Ultra Low Power Nonvolatile Memory in a Standard CMOS Logic Process 会议论文
EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, Hong Kong, PEOPLES R CHINA, DEC 08-10, 2008
作者:  Li, YL (Li, Y-L.);  Feng, P (Feng, P.);  Wu, NJ (Wu, N-J.);  Li, YL, Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(719Kb)  |  收藏  |  浏览/下载：1235/428  |  提交时间：2010/03/09
Voltage  
Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)  |  收藏  |  浏览/下载：1311/197  |  提交时间：2010/03/29
Micro-raman  4h-sic  Defects  3c-inclusions  Triangle-shaped Inclusion  Epitaxial Layers  Silicon-carbide  
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Sun, G (Sun, Guosheng);  Ning, J (Ning, Jin);  Liu, X (Liu, Xingfang);  Zhao, Y (Zhao, Yongmei);  Li, J (Li, Jiaye);  Wang, L (Wang, Lei);  Zhao, W (Zhao, Wanshun);  Wang, L (Wang, Liang);  Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)  |  收藏  |  浏览/下载：1382/222  |  提交时间：2010/03/29
Polycrystalline 3c-sic  Resonator  Doping  Silicon-carbide  
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Zhao, YM (Zhao, Y. M.);  Ning, J (Ning, J.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Li, JM (Li, J. M.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(908Kb)  |  收藏  |  浏览/下载：1089/198  |  提交时间：2010/03/29
Homoepitaxy  4h-sic  Multi-epilayer  Uv Detection  p(+)-pi-n(-)  Ultraviolet Photodetector  Epitaxial-growth  
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Ning, J (Ning, J.);  Zhao, YM (Zhao, Y. M.);  Luo, MC (Luo, M. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(209Kb)  |  收藏  |  浏览/下载：1247/273  |  提交时间：2010/03/29
Avalanche Photodiodes  Area  
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
Silicon Carbide and Related Materials 2005丛书标题: MATERIALS SCIENCE FORUM, Pittsburgh, PA, SEP 18-23, 2005
作者:  Sun, GS (Sun, Guosheng);  Ning, J (Ning, Jin);  Gong, QC (Gong, Quancheng);  Gao, X (Gao, Xin);  Wang, L (Wang, Lei);  Liu, XF (Liu, Xingfang);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(981Kb)  |  收藏  |  浏览/下载：1294/203  |  提交时间：2010/03/29
Homoepitaxial Growth  Low-pressure Hot-wall Cvd  Structural And Optical Characteristics  Intentional Doping  Schottky Barrier Diodes