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一种生长二氧化硅薄膜的方法 专利
专利类型: 发明, 申请日期: 2008-07-02, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓东;  季安;  邢波;  杨富华
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Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure 期刊论文
SPECTROSCOPY AND SPECTRAL ANALYSIS, 2003, 卷号: 23, 期号: 3, 页码: 470-473
Authors:  An L;  Tang Y;  Zhang JD;  Ji Y;  Tan PH;  Yang FH;  Zhaeng HZ;  An L,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Resonance Tunneling  Nonthermal Occupation  Intersubband Relaxation  Quantum-wells  Semiconductor Superlattices  Population-inversion  Electron  Emission  Laser  
三势垒隧穿结构中由外加垂直磁场引入的高子带非热占据 期刊论文
光谱学与光谱分析, 2003, 卷号: 23, 期号: 3, 页码: 470-473
Authors:  安龙;  唐艳;  章继东;  姬扬;  谭平恒;  杨富华;  郑厚植
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静压下半导体微腔内激子与光子行为的研究 期刊论文
光谱学与光谱分析, 2003, 卷号: 23, 期号: 2, 页码: 223-225
Authors:  章继东;  陈京好;  邓元明;  安龙;  章昊;  杨富华;  李国华;  郑厚植
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Occupation modulation of higher subbands in a three-barrier tunnelling structure with a magnetic field 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 10, 页码: 1509-1512
Authors:  An L;  Tang Y;  Zheng HZ;  Zhang JD;  Tan PH;  Yang FH;  Ji Y;  Chen YZ;  Zheng HZ,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Quantum-wells  Semiconductor Superlattices  Population-inversion  Tunneling Structure  Electron  Emission  Laser  
(113)B-GaAs/As(0.3)Ga(0.7)As单量子阱结构的光致发光谱研究 期刊论文
半导体学报, 1997, 卷号: 18, 期号: 11, 页码: 832
Authors:  陈定钦;  邢益荣;  李国华;  朱勤生;  曹作萍;  张广泽;  肖君;  吴汲安;  钟战天
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H原子吸附对Si(113)表面的影响 期刊论文
半导体学报, 1995, 卷号: 16, 期号: 11, 页码: 815
Authors:  张瑞勤;  吴汲安;  邢益荣
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水分子在Si(100)面上吸附位的确定 期刊论文
半导体学报, 1995, 卷号: 16, 期号: 11, 页码: 820
Authors:  张瑞勤;  楚天舒;  戴国才;  吴汲安;  邢益荣
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深冷中性铝团簇的产生和光电离 期刊论文
中国激光, 1994, 卷号: 21, 期号: 12, 页码: 957
Authors:  倪国权;  周汝枋;  翟华金;  王育竹;  吴汲安
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硅中Rh-B络合物性质的理论研究 期刊论文
化学物理学报, 1994, 卷号: 7, 期号: 2, 页码: 131
Authors:  曹洪凯;  倪国权;  吴汲安
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