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Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 625, 页码: 266–270
Authors:  W. Liu;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  J.J. Zhu;  M. Shi;  D.M. Zhao;  X. Li;  J.P. Liu;  S.M. Zhang;  H. Wang;  H. Yang
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The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 卷号: 212, 期号: 12, 页码: 2936–2943
Authors:  P. Chen;  D.G. Zhao;  D.S. Jiang;  J.J. Zhu;  Z.S. Liu;  L.C. Le;  J. Yang;  X. Li;  L. Q. Zhang;  J.P. Liu;  S.M. Zhang;  H. Yang
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The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 88, 页码: 50-55
Authors:  W. Liu;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  J.J. Zhu;  X. Li;  F. Liang;  J.P. Liu;  S.M. Zhang;  H. Yang;  Y.T. Zhang;  G.T. Du
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