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Topological insulator-graphene junction for spin transport 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 101, 期号: 24, 页码: 243102
Authors:  Li, H.;  Zhang, H. B.;  Shao, J. M.;  Zhang, Y. Y.;  Yao, D. X.;  Yang, G. W.
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Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 25, 页码: 252110
Authors:  Le LC (Le, L. C.);  Zhao DG (Zhao, D. G.);  Jiang DS (Jiang, D. S.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.);  Li L (Li, L.);  Wu LL (Wu, L. L.);  Chen P (Chen, P.);  Liu ZS (Liu, Z. S.);  Li ZC (Li, Z. C.);  Fan YM (Fan, Y. M.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.)
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Topological insulator-graphene junction for spin transport 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 24, 页码: 243102
Authors:  Li H (Li, H.);  Zhang HB (Zhang, H. B.);  Shao JM (Shao, J. M.);  Zhang YY (Zhang, Y. Y.);  Yao DX (Yao, D. X.);  Yang GW (Yang, G. W.);  Yao, DX
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Single Dirac Cone  Surface  Bi2te3  Bi2se3  
Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration? 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 19, 页码: 191102
Authors:  Zheng CC (Zheng, C. C.);  Xu SJ (Xu, S. J.);  Zhang F (Zhang, F.);  Ning JQ (Ning, J. Q.);  Zhao DG (Zhao, D. G.);  Yang H (Yang, H.);  Che CM (Che, C. M.)
Adobe PDF(633Kb)  |  Favorite  |  View/Download:795/269  |  Submit date:2013/03/27
Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 20, 页码: Art.No.203120
Authors:  Ma RM (Ma R. M.);  Dai L (Dai L.);  Huo HB (Huo H. B.);  Yang WQ (Yang W. Q.);  Qin GG (Qin G. G.);  Tan PH (Tan P. H.);  Huang CH (Huang C. H.);  Zheng J (Zheng J.);  Dai, L, Peking Univ, Sch Phys, Beijing 100871, Peoples R China. E-mail: lundai@pku.edu.cn
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Wurtzite Zns  Nanoribbons  Luminescence  Nanowires  Growth  
Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 15, 页码: Art.No.152105
Authors:  Wang JF (Wang J. F.);  Yao DZ (Yao D. Z.);  Chen J (Chen J.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Jiang DS (Jiang D. S.);  Yang H (Yang H.);  Liang JW (Liang J. W.);  Wang, JF, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. E-mail: wlino@red.semi.ac.cn
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Chemical-vapor-deposition  Stress Evolution  Defect Structure  Epitaxial Gan  Thin-films  Algan  Dislocations  Relaxation  Reduction  
Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 9, 页码: Art.No.092114
Authors:  Wang H (Wang H.);  Huang Y (Huang Y.);  Sun Q (Sun Q.);  Chen J (Chen J.);  Wang LL (Wang L. L.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Zhang SM (Zhang S. M.);  Jiang DS (Jiang D. S.);  Wang YT (Wang Y. T.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wangh@red.semi.ac.cn
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X-ray-diffraction  Electron-transport  Epitaxial Gan  Band-gap  Dislocations  Sapphire  Aln  
Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 3, 页码: Art.No.033503
Authors:  Wang RX (Wang R. X.);  Xu SJ (Xu S. J.);  Djurisic AB (Djurisic A. B.);  Beling CD (Beling C. D.);  Cheung CK (Cheung C. K.);  Cheung CH (Cheung C. H.);  Fung S (Fung S.);  Zhao DG (Zhao D. G.);  Yang H (Yang H.);  Tao XM (Tao X. M.);  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
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Molecular-beam Epitaxy  N-type Gan  Electrical-properties  Bias Leakage  Diodes  Oxygen  
Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 14, 页码: Art.No.143505
Authors:  Wang RX (Wang R. X.);  Xu SJ (Xu S. J.);  Shi SL (Shi S. L.);  Beling CD (Beling C. D.);  Fung S (Fung S.);  Zhao DG (Zhao D. G.);  Yang H (Yang H.);  Tao XM (Tao X. M.);  Wang, RX, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
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Dislocations  Degradation  
Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 11, 页码: Art.No.112106
Authors:  Zhao DG (Zhao D. G.);  Yang H (Yang Hui);  Zhu JJ (Zhu J. J.);  Jiang DS (Jiang D. S.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Wang YT (Wang Y. T.);  Liang JW (Liang J. W.);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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X-ray-diffraction  Scattering  Growth  Layers