SEMI OpenIR

Browse/Search Results:  1-8 of 8 Help

Filters                
Selected(0)Clear Items/Page:    Sort:
Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
Authors:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)  |  Favorite  |  View/Download:802/197  |  Submit date:2010/03/29
Micro-raman  4h-sic  Defects  3c-inclusions  Triangle-shaped Inclusion  Epitaxial Layers  Silicon-carbide  
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
Authors:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Ning, J (Ning, J.);  Zhao, YM (Zhao, Y. M.);  Luo, MC (Luo, M. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(209Kb)  |  Favorite  |  View/Download:865/273  |  Submit date:2010/03/29
Avalanche Photodiodes  Area  
Combined structure of ZnO vertical well-aligned nanorods and net-like structures on AIN/sapphire 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 306, 期号: 1, 页码: 12-15
Authors:  Wei, HY (Wei, H. Y.);  Cong, GW (Cong, G. W.);  Zhang, PF (Zhang, P. F.);  Hu, WG (Hu, W. G.);  Wu, JJ (Wu, J. J.);  Jiao, CM (Jiao, C. M.);  Liu, XL (Liu, X. L.);  Zhu, QS (Zhu, Q. S.);  Wang, ZG (Wang, Z. G.);  Wei, HY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 10083, Peoples R China. 电子邮箱地址: why@semi.ac.cn
Adobe PDF(418Kb)  |  Favorite  |  View/Download:1018/391  |  Submit date:2010/03/29
Nanostructure  
Chemical composition and elastic strain in AlInGaN quaternary films 期刊论文
THIN SOLID FILMS, 2006, 卷号: 515, 期号: 4, 页码: 1429-1432
Authors:  Zhou, SQ (Zhou, Shengqiang);  Wu, MF (Wu, M. F.);  Yao, SD (Yao, S. D.);  Liu, JP (Liu, J. P.);  Yang, H (Yang, H.);  Zhou, SQ, Peking Univ, Sch Phys, Beijing 100871, Peoples R China. 电子邮箱地址: s.zhou@fz-rossendorf.de
Adobe PDF(155Kb)  |  Favorite  |  View/Download:825/372  |  Submit date:2010/03/29
Rutherford Backscattering Spectroscopy  
Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 295, 期号: 1, 页码: 40370
Authors:  Liu JP (Liu J. P.);  Shen GD (Shen G. D.);  Zhu JJ (Zhu J. J.);  Zhang SM (Zhang S. M.);  Jiang DS (Jiang D. S.);  Yang H (Yang H.);  Liu, JP, Beijing Univ Technol, Beijing Optoelect Technol Lab, Pingleyuan 100, Beijing 100022, Chaoyang Dist, Peoples R China. E-mail: jianpingliu76@hotmail.com
Adobe PDF(171Kb)  |  Favorite  |  View/Download:1076/474  |  Submit date:2010/04/11
Metal Organic Chemical Vapor Deposition  Violet Light-emitting Diodes  Alingan Quaternary Alloy  Quaternary Alingan Epilayers  Emission  Gan  
Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 25, 页码: Art.No.252101
Authors:  Zhao DG (Zhao D. G.);  Jiang DS (Jiang D. S.);  Yang H (Yang Hui);  Zhu JJ (Zhu J. J.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Liang JW (Liang J. W.);  Hao XP (Hao X. P.);  Wei L (Wei L.);  Li X (Li X.);  Li XY (Li X. Y.);  Gong HM (Gong H. M.);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
Adobe PDF(177Kb)  |  Favorite  |  View/Download:1164/432  |  Submit date:2010/04/11
Yellow Luminescence  Electron-beam  Vacancies  
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Authors:  Sun GS (Sun G. S.);  Liu XF (Liu X. F.);  Gong QC (Gong Q. C.);  Wang L (Wang L.);  Zhao WS (Zhao W. S.);  Li JY (Li J. Y.);  Zeng YP (Zeng Y. P.);  Li JM (Li J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  Favorite  |  View/Download:1087/503  |  Submit date:2010/04/11
4h-sic  Homoepitaxial Layers  Surface Morphological Defect  Optical Microscopy  Silicon-carbide  Dislocations  Films  
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
Authors:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  Favorite  |  View/Download:847/281  |  Submit date:2010/03/29
4h-sic