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Cavity-enhanced photoluminescence of SiGe/Si multiquantum wells grown on silicon-on-insulator substrate 期刊论文
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 95, 期号: 10, 页码: 5914-5916
Authors:  Li CB;  Huang CJ;  Cheng BW;  Zuo YH;  Mao RW;  Luo LP;  Yu JZ;  Wang QM;  Li, CB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址:
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SiGe/Si resonant-cavity-enhanced photodetectors for 1.3 mu m operation fabricated using wafer bonding techniques 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 92, 期号: 3, 页码: 1718-1720
Authors:  Li C;  Huang CJ;  Cheng BW;  Zuo YH;  Luo LP;  Yu JZ;  Wang QM;  Li C,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Thermal redistribution of photocarriers between bimodal quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 4, 页码: 1973-1976
Authors:  Zhang YC;  Huang CJ;  Liu FQ;  Xu B;  Wu J;  Chen YH;  Ding D;  Jiang WH;  Ye XL;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Temperature-dependence  Carrier Relaxation  Emission