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Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Wang, XH;  Wang, XL;  Xiao, HL;  Feng, C;  Wang, XY;  Wang, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)  |  收藏  |  浏览/下载：1865/329  |  提交时间：2010/03/09
Gas Sensors  Hemt Structures  Mobility  Temperature  Transistors  Growth  Mocvd  Layer  
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wang, XH;  Wan, XL;  Xiao, HL;  Feng, C;  Way, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(339Kb)  |  收藏  |  浏览/下载：1648/523  |  提交时间：2010/03/09
Hydrogen Sensor  Algan/gan Heterostructure  Schottky Diode  
A New Technique for Side Pumping of Double-Clad Fiber Lasers 会议论文
AOE 2007 ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, Shanghai, PEOPLES R CHINA, OCT 17-19, 2007
作者:  Wang, DZ;  Feng, XM;  Wang, YG;  Wang, CL;  Lan, YS;  Liu, SP;  Ma, XY;  Wang, DZ, Chinese Acad Sci, Inst Semicond, Grp High Power Lasers, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(282Kb)  |  收藏  |  浏览/下载：1221/296  |  提交时间：2010/03/09
High-power operation of quantum cascade lasers endured prolonged air-oxidation 会议论文
Conference Digest of the 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Shanghai, PEOPLES R CHINA, SEP 18-22, 2006
作者:  Shao, Y (Shao, Ye);  Liu, FQ (Liu, Feng-Qi);  Li, L (Li, Lu);  Lu, XZ (Lu, Xiu-Zhen);  Liu, JQ (Liu, Jun-Qi);  Wang, ZG (Wang, Zhan-Guo);  Liu, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(1197Kb)  |  收藏  |  浏览/下载：1461/329  |  提交时间：2010/03/29
Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE 会议论文
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, MAY 07-11, 2006
作者:  Feng, W (Feng, W.);  Pan, JQ (Pan, J. Q.);  Zhou, F (Zhou, F.);  Zhao, LJ (Zhao, L. J.);  Zhu, HL (Zhu, H. L.);  Wang, W (Wang, W.);  Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(417Kb)  |  收藏  |  浏览/下载：1235/295  |  提交时间：2010/03/29
Buried-heterostructure Lasers  Bandgap Energy Control  Vapor-phase Epitaxy  Pressure Movpe  Converter  
Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4), TOULOUSE, FRANCE, JUL 22-26, 2002
作者:  Lan Q;  Niu ZC;  Zhou DY;  Kong YC;  Wang XD;  Miao ZH;  Feng SL;  Niu ZC Chinese Acad Sci Natl Lab Superlattices Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(252Kb)  |  收藏  |  浏览/下载：1064/218  |  提交时间：2010/11/15
16-channel VCSEL based multiple chip modules 会议论文
2002 DIGEST OF THE LEOS SUMMER TOPICAL MEETINGS, MT TREMBLANT, CANADA, JUL 15-17, 2002
作者:  Chen HD;  Mao LH;  Tiang J;  Liang K;  Shen RX;  Du Y;  Huang YZ;  Wu RH;  Feng J;  Ke XM;  Liu HY;  Wang ZG;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(146Kb)  |  收藏  |  浏览/下载：1994/366  |  提交时间：2010/10/29
Hybrid CMOS/VCSEL optoelectronic modules 会议论文
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, SHANGHAI, PEOPLES R CHINA, OCT 22-25, 2001
作者:  Chen HD;  Mao LH;  Tiang J;  Liang K;  Du Y;  Huang YZ;  Wu RG;  Feng J;  Ke XM;  Liu HY;  Wang ZG;  Li SR;  Li ZY;  Guo WL;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(212Kb)  |  收藏  |  浏览/下载：1599/313  |  提交时间：2010/10/29
Vcsel  Cmos  Mcm  Optoelectronic Integration  Smart Pixels  Optical Interconnects  Smart  
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:  Niu ZC;  Wang XD;  Miao ZH;  Lan Q;  Kong YC;  Zhou DY;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1208/0  |  提交时间：2010/10/29
Molecular Beam Epitaxy  Ingaas Islands  Photolumineseence  Line-width  1.3 Mu-m  Inas/gaas Quantum Dots  Optical-properties  Cap Layer  Gaas  Luminescence  Strain  
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Niu ZC;  Wang XD;  Miao ZH;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(171Kb)  |  收藏  |  浏览/下载：1150/221  |  提交时间：2010/11/15
Crystal Morphology  Quantum Dots  Molecular Beam Epitaxy  Semiconducting Gallium Arsenide  Semiconducting Indium Gallium Arsenide  1.35 Mu-m  Gaas-surfaces  Photoluminescence  Islands