SEMI OpenIR

浏览/检索结果: 共5条,第1-5条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Unattended ground sensor system based on fiber optic disk accelerometer 会议论文
2006 Optics Valley of China International Symposium on Optoelectronics, Wuhan, PEOPLES R CHINA, NOV 01-04, 2006
作者:  Wang, YJ (Wang, Yongjie);  Li, F (Li, Fang);  Xiao, H (Xiao, Hao);  Liu, YL (Liu, Yuliang);  Wang, YJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(3973Kb)  |  收藏  |  浏览/下载:1159/230  |  提交时间:2010/03/29
Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Fang, CB;  Wang, XL;  Wang, JX;  Liu, C;  Wang, CM;  Hu, GX;  Li, JP;  Li, CJ;  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(270Kb)  |  收藏  |  浏览/下载:1319/262  |  提交时间:2010/03/29
Thermally Stimulated Current  Gallium Nitride  Defects  
A low power consumption thermo-optic variable optical attenuator based on SOI material 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Fang, Q;  Li, F;  Wang, CX;  Xin, HL;  Liu, YL;  Fang, Q, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载:1083/240  |  提交时间:2010/03/29
Ti Schottky barrier diodes on n-type 6H-SiC 会议论文
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, SHANGHAI, PEOPLES R CHINA, OCT 22-25, 2001
作者:  Liu ZL;  Wang SR;  Yu F;  Zhang YG;  Zhao H;  Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(214Kb)  |  收藏  |  浏览/下载:1504/581  |  提交时间:2010/10/29
Semiconductor  
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 72 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Wang QY;  Nie JP;  Yu F;  Liu ZL;  Yu YH;  Wang QY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(121Kb)  |  收藏  |  浏览/下载:1285/267  |  提交时间:2010/11/15
Solid Phase Epitaxy  SilicOn On Sapphire (Sos)  Carrier Mobility