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Magnetoresistance in a nominally undoped InGaN thin film 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 卷号: 99, 期号: 1, 页码: 63-66
Authors:  Ding K;  Zeng YP;  Li YY;  Cui LJ;  Wang JX;  Lu HX;  Cong PP;  Ding, K, Chinese Acad Sci, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dingkai@red.semi.ac.cn
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Negative Magnetoresistance  Diodes  
Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 48, 期号: 2, 页码: Art. No. 021001
Authors:  Ding K;  Zeng YP;  Duan RF;  Wei XC;  Wang JX;  Ma P;  Lu HX;  Cong PP;  Li JM;  Ding K Chinese Acad Sci Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: dingkai@red.semi.ac.cn
Adobe PDF(304Kb)  |  Favorite  |  View/Download:1347/608  |  Submit date:2010/03/08
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