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Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 288, 期号: 1, 页码: 40529
Authors:  Jiang DS;  Qu YH;  Ni HQ;  Wu DH;  Xu YQ;  Niu ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iii-v Materials  Mu-m  Lasers  Temperature  Surfactant  Nm  
Room temperature 1.25 mu m emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 278, 期号: 1-4, 页码: 728-733
Authors:  Niu ZC;  Ni HQ;  Xu XH;  Xu YQ;  He ZH;  Han Q;  Wu RH;  Niu, ZC, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
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Strain  
Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 278, 期号: 1-4, 页码: 558-563
Authors:  Niu ZC;  Xu XH;  Ni HQ;  Xu YQ;  He ZH;  Han Q;  Wu RH;  Niu, ZC, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
Adobe PDF(280Kb)  |  Favorite  |  View/Download:913/242  |  Submit date:2010/03/17
Bilayer Quantum Well