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生长氧化锌纳米棒阵列的方法 专利
专利类型: 发明, 申请日期: 2009-05-13, 公开日期: 3994
Inventors:  范海波;  杨少延;  张攀峰;  魏鸿源;  刘祥林;  朱勤生;  陈涌海;  王占国 
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Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 16, 页码: Art.No.162104
Authors:  Zhang RQ (Zhang Riqing);  Zhang PF (Zhang Panfeng);  Kang TT (Kang Tingting);  Fan HB (Fan Haibo);  Liu XL (Liu Xianglin);  Yang SY (Yang Shaoyan);  Wei HY (Wei Hongyuan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang, Zhanguo);  Zhang, RQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangriq@semi.ac.cn;  xlliu@red.semi.ac.cn
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Inn  
Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) 期刊论文
NANOTECHNOLOGY, 2007, 卷号: 18, 期号: 1, 页码: Art.No.015402
Authors:  Wu JJ (Wu Jiejun);  Zhang GY (Zhang Guoyi);  Liu XL (Liu Xianglin);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Jia QJ (Jia Quanjie);  Guo LP (Guo Liping);  Wu, JJ, Peking Univ, Res Ctr Wide Gap Semicond, State Key Lab Artificial Microstruct & Mesoscop, Sch Phys, Beijing 100871, Peoples R China. 电子邮箱地址: jiejunw@red.semi.ac.cn
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Chemical-vapor-deposition  
InN nanoflowers grown by metal organic chemical vapor deposition 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 7, 页码: Art.No.071113
Authors:  Kang TT (Kang Ting-Ting);  Liu X (Liu Xianglin);  Zhang RQ (Zhang Ri Q.);  Hu WG (Hu Wei G.);  Cong G (Cong Guangwei);  Zhao FA (Zhao Feng-Ai);  Zhu Q (Zhu Qinsheng);  Kang, TT, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ktt219@163.com
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Crystal-growth  Nitride  Nanowires  
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
OPTICAL MATERIALS, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Authors:  Wu JJ (Wu Jiejun);  Han XX (Han Xiuxun);  Li JM (Li Jiemin);  Wei HY (Wei Hongyuan);  Cong GW (Cong Guangwei);  Liu XL (Liu Xianglin);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo);  Jia QJ (Jia Quanjie);  Guo LP (Guo Liping);  Hu TD (Hu Tiandou);  Wang HH (Wang Huanhua);  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: jiejunw@red.semi.ac.cn
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In dopIng  Cracks  Si(111) Substrate  Lt-algan Interlayer  Metalorganic Chemical Vapor Deposition  Gan  Phase Epitaxy  Indium-surfactant  Optical-properties  Si(111)  Stress  Films  
一种氢致解偶合的异质外延用柔性衬底 专利
专利类型: 发明, 申请日期: 2005-03-09, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张志成;  杨少延;  黎大兵;  刘祥林;  陈涌海;  朱勤生;  王占国
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制备低温超薄异质外延用柔性衬底的方法 专利
专利类型: 发明, 申请日期: 2004-03-24, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张志成;  杨少延;  黎大兵;  陈涌海;  朱勤生;  王占国
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一种制作白光发光二极管的方法 专利
专利类型: 发明, 申请日期: 2004-02-11, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈振;  韩培德;  陆大成;  刘祥林;  王晓晖;  朱勤生;  王占国
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GaN的声表面波特性研究 期刊论文
发光学报, 2003, 卷号: 24, 期号: 2, 页码: 161-164
Authors:  严莉;  陈晓阳;  何世堂;  李红浪;  韩培德;  陈振;  陆大成;  刘祥林;  王晓晖;  李昱峰;  袁海荣;  陆沅;  黎大兵;  朱勤生;  王占国
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钝化低温法生长多层InGaN量子点的结构和光学特性 期刊论文
发光学报, 2003, 卷号: 24, 期号: 2, 页码: 135-138
Authors:  王晓晖;  李昱峰;  陆大成;  刘祥林;  袁海荣;  陆沅;  黎大兵;  王秀凤;  朱勤生;  王占国;  陈振;  韩培德
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