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直径六英寸半绝缘砷化镓单晶生长技术 成果
2007
Accomplishers:  李晋闽;  曾一平;  惠峰;  卜俊鹏;  王文军;  郑红军;  孙红方
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六英寸半绝缘砷化镓单晶  
ф2”和 ф3”非掺Si-GaAs单晶(片)研究 成果
1996
Accomplishers:  林兰英;  曹福;  白玉珂;  惠峰;  卜俊鹏
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Si-gaas