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Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Authors:  Sun GS (Sun G. S.);  Liu XF (Liu X. F.);  Gong QC (Gong Q. C.);  Wang L (Wang L.);  Zhao WS (Zhao W. S.);  Li JY (Li J. Y.);  Zeng YP (Zeng Y. P.);  Li JM (Li J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  Favorite  |  View/Download:1105/503  |  Submit date:2010/04/11
4h-sic  Homoepitaxial Layers  Surface Morphological Defect  Optical Microscopy  Silicon-carbide  Dislocations  Films  
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
Authors:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  Favorite  |  View/Download:865/281  |  Submit date:2010/03/29
4h-sic