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Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 681, 页码: 522-526
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  J.P. Liu;  L.Q. Zhang;  H. Yang;  Y.T. Zhang;  G.T. Du
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GaN high electron mobility transistors with AlInN back barriers 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 662, 页码: 16-19
Authors:  X.G. He;  D.G. Zhao;  D.S. Jiang;  J.J. Zhu;  P. Chen;  Z.S. Liu;  L.C. Le;  J. Yang;  X.J. Li;  J.P. Liu;  L.Q. Zhang;  H. Yang
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