中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共11条，第1-10条 帮助

限定条件        
已选(0)清除 条数/页：   排序方式：
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1663/401  |  提交时间：2010/03/29
Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1483/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
作者:  Jiang DS;  Liang XG;  Sun BQ;  Bian L;  Li LH;  Pan Z;  Wu RG;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(240Kb)  |  收藏  |  浏览/下载：1333/283  |  提交时间：2010/10/29
Luminescence  Localization  
Optical study on the coupled GaAsSb/GaAs double quantum wells 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Jiang DS;  Liang XG;  Chang K;  Bian LF;  Sun BQ;  Wang JB;  Johnson S;  Zhang Y;  Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
Adobe PDF(215Kb)  |  收藏  |  浏览/下载：1366/272  |  提交时间：2010/10/29
Lasers  Gain  Gaas  
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun BQ;  Jiang DS;  Pan Z;  Li LH;  Wu RH;  Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(112Kb)  |  收藏  |  浏览/下载：1136/261  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iiiv Materials  Luminescence  Gaasn  
Optical transitions in GaNAs/GaAs single quantum well 会议论文
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1, NAGOYA, JAPAN, SEP 24-27, 2000
作者:  Luo XD;  Xu ZY;  Sun BQ;  Pan Z;  Li LH;  Lin YW;  Ge WK;  Luo XD Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(314Kb)  |  收藏  |  浏览/下载：1161/244  |  提交时间：2010/10/29
Ganas  Photoluminescence  Band Offset  Band Bowing Coefficient  Localized Exciton  Molecular-beam Epitaxy  Alloys  Temperature  Gaasn  
Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Wang JN;  Sun BQ;  Wang XR;  Wang YQ;  Ge WK;  Jiang DS;  Wang HL;  Wang JN Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1258/271  |  提交时间：2010/11/15
Superlattices  Gaas/alas  Electric Field Domains  Tunnelling  Oscillations  
Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice 会议论文
PHYSICA B, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
作者:  Sun BQ;  Wang JN;  Jiang DS;  Wu JQ;  Wang YQ;  Ge WK;  Sun BQ Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1166/228  |  提交时间：2010/11/15
Transverse Magnetic Field  Field Domains  Self-sustained Oscillations  Semiconductors  
Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots 会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
作者:  Jiang DS;  Gong Q;  Chen YB;  Sun BQ;  Liang JB;  Wang ZG;  Jiang DS Chinese Acad Sci Inst Semicond NLSM POB 912 Beijing 100083 Peoples R China.
Adobe PDF(279Kb)  |  收藏  |  浏览/下载：1102/188  |  提交时间：2010/11/15
Effect of carrier relaxation and emission on photoluminescence of InAs quantum dots 会议论文
PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON QUANTUM CONFINEMENT: NANOSTRUCTURES, 98 (19), BOSTON, MA, NOV 02-05, 1998
作者:  Zhu HJ;  Wang ZM;  Sun BQ;  Feng SL;  Jiang DS;  Zheng HZ;  Zhu HJ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：823/0  |  提交时间：2010/10/29