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AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Tang J;  Wang XL;  Chen TS;  Xiao HL;  Ran JX;  Zhang ML;  Hu GX;  Feng C;  Hou QF;  Wei M;  Li JM;  Wang ZG;  Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3875Kb)  |  收藏  |  浏览/下载：1769/433  |  提交时间：2010/03/09
Algan/gan Hemts  
Growth of GaSb and GaInAsSb layers for thermophotovolatic cells by liquid phase epitaxy - art. no. 68411E 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Liu L;  Chen NF;  Gao FB;  Yin ZG;  Bai YM;  Zhang XW;  Liu, L, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(371Kb)  |  收藏  |  浏览/下载：1414/304  |  提交时间：2010/03/09
Thermophotovoltaic Cell