SEMI OpenIR

浏览/检索结果: 共6条,第1-6条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Directed XOR/XNOR logic circuit implemented by microring resonators: simulation and demonstration 会议论文
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012105 2011, Wuhan, PEOPLES R CHINA, NOV 02-05, 2010
作者:  Zhang L (Zhang Lei);  Ji RQ (Ji Ruiqiang);  Jia LX (Jia Lianxi);  Yang L (Yang Lin);  Zhou P (Zhou Ping);  Tian YH (Tian Yonghui);  Chen P (Chen Ping);  Lu YY (Lu Yangyang);  Jiang ZY (Jiang Zhenyu);  Liu YL (Liu Yuliang)
Adobe PDF(784Kb)  |  收藏  |  浏览/下载:2676/617  |  提交时间:2011/07/15
Large-Signal Performance of 1.3 mu m InAs/GaAs quantum-dot lasers 会议论文
, Shanghai, PEOPLES R CHINA, AUG 30-SEP 03, 2009
作者:  Ji;  HM;  Cao;  YL;  Xu PF;  Gu YX;  Ma WQ;  Liu Y;  Wang X;  Xie L;  Yang T;  Ji, HM, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
Adobe PDF(274Kb)  |  收藏  |  浏览/下载:1740/471  |  提交时间:2010/06/04
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Sun, GS;  Zhao, YM;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)  |  收藏  |  浏览/下载:1635/274  |  提交时间:2010/03/09
In-situ Doping  Boron  Aluminum  Memory Effects  Hot-wall Lpcvd  4h-sic  
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Ji, G;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, YM;  Wang, L;  Zhao, WS;  Zeng, YP;  Ji, G, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(1783Kb)  |  收藏  |  浏览/下载:1351/225  |  提交时间:2010/03/09
Simulation and fabrication of the SiC-based clamped-clamped filter 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Zhao, YM;  Ning, J;  Sun, GS;  Liu, XF;  Wang, L;  Ji, G;  Zhao, WS;  Li, JM;  Yang, FH;  Zhao, YM, Chinese Acad Sci, Inst Semicond, State Key Labs Transducer Technol, Beijing 100083, Peoples R China.
Adobe PDF(4954Kb)  |  收藏  |  浏览/下载:1391/274  |  提交时间:2010/03/09
Micromechanical Resonators  Frequency  
On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J 会议论文
OPTOELECTRONIC MATERIALS AND DEVICES II, Wuhan, PEOPLES R CHINA, NOV 02-05, 2007
作者:  Shou-Li Z;  De-Ping X;  Ya-Li I;  Hai-Lin C;  Yin-Zhe C;  Ang M;  Ji-He L;  Jun-Hua G;  Shou-Li, Z, Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310014, Peoples R China.
Adobe PDF(431Kb)  |  收藏  |  浏览/下载:1508/301  |  提交时间:2010/03/09
Rce- P-i-n-pd