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Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Yang H;  Liang JW;  Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(92Kb)  |  收藏  |  浏览/下载：1223/308  |  提交时间：2010/10/29
Buffer Layer  Substrate  Diodes  Growth  
Design of high brightness cubic-GaN LEDs grown on GaAs substrate 会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:  Sun YP;  Shen XM;  Zhang ZH;  Zhao DG;  Feng ZH;  Fu Y;  Zhang SN;  Yang H;  Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(172Kb)  |  收藏  |  浏览/下载：1261/260  |  提交时间：2010/11/15
Wafer Bunding  Cubic Gan  Light-emitting-diodes  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Mirror  Junction  
16-channel VCSEL based multiple chip modules 会议论文
2002 DIGEST OF THE LEOS SUMMER TOPICAL MEETINGS, MT TREMBLANT, CANADA, JUL 15-17, 2002
作者:  Chen HD;  Mao LH;  Tiang J;  Liang K;  Shen RX;  Du Y;  Huang YZ;  Wu RH;  Feng J;  Ke XM;  Liu HY;  Wang ZG;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(146Kb)  |  收藏  |  浏览/下载：1983/366  |  提交时间：2010/10/29