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Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films 会议论文
MATERIALS RESEARCH, Chongqing, PEOPLES R CHINA, JUN 09-12, 2008
作者:  Zhao L;  Lu ZX;  Cheng CJ;  Zhao DG;  Zhu JJ;  Sun BJ;  Qu B;  Zhang XF;  Sun WG;  Zhao, L, Luoyang Optoelect Inst, Luoyang, Peoples R China.
Adobe PDF(392Kb)  |  收藏  |  浏览/下载：1583/344  |  提交时间：2010/03/09
Alxga1-xn  
Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:  Fang, CB;  Wang, XL;  Hu, GX;  Wang, JX;  Wang, CM;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：1345/359  |  提交时间：2010/03/29
Mocvd