中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共57条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films 会议论文
MATERIALS RESEARCH, Chongqing, PEOPLES R CHINA, JUN 09-12, 2008
作者:  Zhao L;  Lu ZX;  Cheng CJ;  Zhao DG;  Zhu JJ;  Sun BJ;  Qu B;  Zhang XF;  Sun WG;  Zhao, L, Luoyang Optoelect Inst, Luoyang, Peoples R China.
Adobe PDF(392Kb)  |  收藏  |  浏览/下载：1591/344  |  提交时间：2010/03/09
Alxga1-xn  
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Li, JM;  Zeng, YP;  Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)  |  收藏  |  浏览/下载：1875/307  |  提交时间：2010/03/09
Silicon Carbide  Aluminum Nitride  Buffer Layer  Lpcvd  
Low Temperature Deposited Nano-structured Vanadium Oxide Thin Films for Uncooled Infrared Detectors 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Li GK;  Wang XD;  Liang JR;  Ji A;  Hu M;  Yang F;  Liu J;  Wu NJ;  Chen HD;  Li, GK, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(803Kb)  |  收藏  |  浏览/下载：1686/420  |  提交时间：2010/03/09
Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Wang XD;  Li GK;  Liang JR;  Ji A;  Hu M;  Yang FH;  Liu J;  Wu NJ;  Chen HD;  Wang, XD, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.
Adobe PDF(706Kb)  |  收藏  |  浏览/下载：1746/352  |  提交时间：2010/03/09
V2o5 Thin-films  
Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes 会议论文
2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, Sanya, PEOPLES R CHINA, JAN 06-09, 2008
作者:  Zhou, W;  Yang, JL;  Sun, GS;  Liu, XF;  Yang, FH;  Li, JM;  Zhou, W, CAS, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(511Kb)  |  收藏  |  浏览/下载：2031/511  |  提交时间：2010/03/09
Bulge Test Fracture Property  Silicon Carbide Thin Films  Weibull Distribution Function  
Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test 会议论文
2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, Sanya, PEOPLES R CHINA, JAN 06-09, 2008
作者:  Zhou, W;  Yang, JL;  Li, Y;  Yang, FH;  Yang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(267Kb)  |  收藏  |  浏览/下载：1402/372  |  提交时间：2010/03/09
Bulge Test  Fracture Property  Silicon Nitride  Weibull Distribution Function  
Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G 会议论文
THIN FILM PHYSICS AND APPLICATIONS,SIXTH INTERNATIONAL CONFERENCE, Shanghai, PEOPLES R CHINA, SEP 25-28, 2007
作者:  Chen P;  Lib SP;  Tu XG;  Zuo YH;  Zhao L;  Chen SW;  Li JC;  Lin W;  Chen HY;  Liu DY;  Kang JY;  Yu YD;  Yu JZ;  Wang QM;  Chen, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(386Kb)  |  收藏  |  浏览/下载：1692/355  |  提交时间：2010/03/09
Pockels Effect  
In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Liu, YF;  Xie, J;  Yang, JL;  Tang, LJ;  Yang, FH;  Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(1394Kb)  |  收藏  |  浏览/下载：1428/370  |  提交时间：2010/03/09
Films  
Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)  |  收藏  |  浏览/下载：1322/197  |  提交时间：2010/03/29
Micro-raman  4h-sic  Defects  3c-inclusions  Triangle-shaped Inclusion  Epitaxial Layers  Silicon-carbide  
Silicon thin films prepared in the transition region and their use in solar cells 会议论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, Bangkok, THAILAND, JAN 27-FEB 01, 2004
作者:  Zhang S;  Liao X;  Raniero L;  Fortunato E;  Xu Y;  Kong G;  Aguas H;  Ferreira I;  Martins R;  Zhang, S, New Univ Lisbon, Fac Sci & Technol, CENIMAT, Dept Mat Sci, P-2829516 Caparica, Portugal. 电子邮箱地址: sz@uninova.pt
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1600/301  |  提交时间：2010/03/29
Silicon